Phys. Rev. B 74, 085308 (2006) [7 pages]
Topological quantization of the spin Hall effect in two-dimensional paramagnetic semiconductors
Abstract
References (28)
Citing Articles
Xiao-Liang Qi, 1 Yong-Shi Wu, 2,1 and Shou-Cheng Zhang3,11Center for Advanced Study, Tsinghua University, Beijing 100084, China
2Department of Physics, University of Utah, Salt Lake City, Utah 84112-0830, USA
3Department of Physics, McCullough Building, Stanford University, Stanford, California 94305-4045, USA
Received 13 May 2005; revised 13 June 2006; published 10 August 2006
We propose models of two-dimensional paramagnetic semiconductors where the intrinsic spin Hall effect is exactly quantized in integer units of a topological charge. The model describes a topological insulator in the bulk and a "holographic metal" at the edge, where the number of extended edge states crossing the Fermi level is dictated by (exactly equal to) the bulk topological charge. We also demonstrate the spin Hall effect explicitly in terms of the spin accumulation caused by the adiabatic flux insertion.
©2006 The American Physical Society
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