Evidence from ARPES that the Ge(001) surface is semiconducting at room temperature

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C. Jeon,¹ C. C. Hwang,² T.-H. Kang,² K.-J. Kim,² B. Kim,^2,3 Y. Chung,² and C. Y. Park¹
¹BK21 Physics Research Division and Center for Nanotubes and Nanostructured Composites, Sungkyunkwan University, Suwon 440-746, Republic of Korea
²Beamline Research Division, Pohang Accelerator Laboratory (PAL), Pohang University of Science and Technology, Pohang, Kyungbuk 790-784, Republic of Korea
³Department of Physics, Pohang University of Science and Technology, Pohang, Kyungbuk 790-784, Republic of Korea

Received 28 June 2006; published 5 September 2006

Angle-resolvedphotoemission spectroscopy (ARPES) is used to investigate whether the Ge(001)surface is metallic or not at room temperature (RT). Theuppermost filled state is a surface state originating from thedangling bonds of the updimers. A metallic state, which hasbeen previously reported to exist only near Gamma , is alsoweakly visible at the J <sub>2</sub><sup>[prime]</sup> point along the [010] directionat temperatures higher than RT and the state completely disappearsat RT. These results indicate that the metallic state isthe lowest empty surface state of the asymmetric 2×1 structureat RT. Contrary to the belief that the surface ismetallic at RT, the present ARPES results strongly suggest thatthe Ge(001) surface is semiconducting with a gap of about0.44 eV at RT.

URL:	http://link.aps.org/doi/10.1103/PhysRevB.74.125407
DOI:	10.1103/PhysRevB.74.125407
PACS:	73.20.At; 79.60.Bm 73.20.At Surface states, band structure, electron density of states 79.60.Bm Photoelectron spectra of clean metal, semiconductor, and insulator surfaces YEAR: 2006
KEYWORDS:	germanium, photoelectron spectra, elemental semiconductors, surface states, dangling bonds, energy gap

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