STM and ab initio study of holmium nanowires on a Ge(111) surface

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C. Eames, C. Bonet, M. I. J. Probert, and S. P. Tear
Department of Physics, University of York, York YO10 5DD, United Kingdom

E. W. Perkins
School of Physics and Astronomy, University of Nottingham, Nottingham NG7 2RD, United Kingdom

Received 12 July 2006; revised 8 September 2006; published 29 November 2006

Ananorod structure has been observed on the Ho/Ge(111) surface usingscanning tunneling microscopy (STM). The rods do not require patterningof the surface or defects such as step edges inorder to grow as is the case for nanorods onSi(111). At low holmium coverage the nanorods exist as isolatednanostructures while at high coverage they form a periodic 5×1structure. We propose a structural model for the 5×1 unitcell and show using an ab initio calculation that theSTM profile of our model structure compares favorably to thatobtained experimentally for both filled and empty states sampling. Thecalculated local density of states shows that the nanorod ismetallic in character.

URL:	http://link.aps.org/doi/10.1103/PhysRevB.74.193318
DOI:	10.1103/PhysRevB.74.193318
PACS:	61.46.-w; 61.43.Bn; 68.37.Ef 61.46.-w Nanoscale materials 61.43.Bn Structural modeling of disordered solids including serial-addition models, computer simulation 68.37.Ef Scanning tunneling microscopy of surfaces, interfaces and thin films including chemistry induced with STM YEAR: 2006
KEYWORDS:	scanning tunnelling microscopy, nanowires, germanium, elemental semiconductors, holmium, ab initio calculations, electronic density of states

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H. W. Yeom et al., Phys. Rev. Lett. 82, 4898 (1999).
R. Losio, K. N. Altmann, and F. J. Himpsel, Phys. Rev. Lett. 85, 808 (2000).
J.-Z. Wang, J.-F. Jia, X. Liu, W.-D. Chen, and Q.-K. Xue, Phys. Rev. B 65, 235303 (2002).
Y. Chen, D. A. A. Ohlberg, and R. S. Williams, J. Appl. Phys. 91, 3213 (2002).
D. J. Spence, T. C. Q. Noakes, P. Bailey, and S. P. Tear, Phys. Rev. B 62, 5016 (2000).
C. Bonet, I. M. Scott, D. J. Spence, T. J. Wood, T. C. Q. Noakes, P. Bailey, and S. P. Tear, Phys. Rev. B 72, 165407 (2005).
J. Tersoff and D. R. Hamann, Phys. Rev. B 31, 805 (1985).