Disorder effect on electronic and optical properties of doped carbon nanotubes

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Jun Ma,¹ Shuguang Guan,¹ and C.-H. Lai²
¹Temasek Laboratories, National University of Singapore, 5 Sports Drive 2, 117508 Singapore
²Department of Physics, National University of Singapore, 117543 Singapore

Received 9 May 2006; published 1 November 2006

Inthis work, we investigate the effects of disorder in thedoped carbon nanotubes. Based on the extended Su-Schrieffer-Heeger model, itis shown that with the increase of doped impurity atoms,such as nitrogen or boron, the symmetry of the hoppingprocesses among the doped and carbon lattices collapses, and thestatistics of the nearest neighbor energy level spacing changes fromthe Poisson distribution to the Wigner distribution, indicating the occurrenceof disorder effect in heavily doped nanotubes. As a result,the nanotube changes from a metal to a semiconductor. Wealso study the disorder effect on linear optical absorption indoped nanotubes. It is demonstrated that the linear optical absorptioncan be greatly suppressed due to the collapse of thediscrete spatial symmetry in heavily doped nanotubes. Based on therandom matrix theory, we carry out a theoretical analysis, whichagrees well with our numerical simulations.

URL:	http://link.aps.org/doi/10.1103/PhysRevB.74.205401
DOI:	10.1103/PhysRevB.74.205401
PACS:	05.45.-a; 72.80.Rj; 33.15.-e 05.45.-a Nonlinear dynamics and nonlinear dynamical systems 72.80.Rj Electrical conductivity of fullerenes and related materials 33.15.-e Properties of molecules YEAR: 2006
KEYWORDS:	boron, hopping conduction, nitrogen, carbon nanotubes, elemental semiconductors, heavily doped semiconductors, Poisson distribution, Wigner distribution

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