Phys. Rev. B 75, 075308 (2007) [5 pages]
Characteristic jump in the electrical properties of a Pd/AlN/Si-based device on exposure to hydrogen
Abstract
References (30)
Citing Articles
J. S. Thakur, 1 H. E. Prakasam, 1 Linfeng Zhang, 1 E. F. McCullen, 1 L. Rimai, 1 V. M. García-Suárez, 2 R. Naik, 3 K. Y. S. Ng, 4 and G. W. Auner11Department of Electrical and Computer Engineering, Wayne State University, Detroit, Michigan 48202, USA
2Department of Physics, Lancaster University, Lancaster LA1 4YB, United Kingdom
3Department of Physics and Astronomy, Wayne State University, Detroit, Michigan 48202, USA
4Department of Chemical Engineering and Materials Science, Wayne State University, Detroit, Michigan 48202, USA
Received 15 June 2006; revised 11 December 2006; published 6 February 2007
The time-dependant current response of Pd/AlN/Si-based devices is investigated for different hydrogen concentrations. At a fixed applied voltage, the device current suddenly increases when hydrogen gas is turned on and the magnitude of this current shift varies with the hydrogen concentrations. Using first-principles simulations, the electronic structure of the Pd with different hydrogen concentrations in tetrahedric and octahedric positions is calculated. We find that when hydrogen loads the Pd metal, its Fermi energy changes, which affects the Fermi level of the Pd/AlN/Si device and thus its electrical response.
©2007 The American Physical Society
| URL: |
http://link.aps.org/doi/10.1103/PhysRevB.75.075308
|
| DOI: |
10.1103/PhysRevB.75.075308 |
| PACS: |
68.43.Mn;
68.65.Ac;
68.47.-b
|
| KEYWORDS: |
hydrogen,
palladium,
aluminium compounds,
III-V semiconductors,
wide band gap semiconductors,
silicon,
elemental semiconductors,
MIS devices,
impurity distribution,
ab initio calculations,
Fermi level
|
REFERENCES (30)
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