Kinetic stabilization of a pristine Fe film on (4×2)-GaAs(100)

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Jae-Min Lee and S.-J. Oh
School of Physics and Center for Strongly Correlated Material Research, Seoul National University, Seoul 151-747, Korea

K. J. Kim
Pohang Accelerator Laboratory, Pohang University of Science and Technology, Pohang 790-784, Korea

S.-U. Yang, J.-H. Kim, and J.-S. Kim
Department of Physics, Sook-Myung Women's University, Seoul 140-742, Korea

Received 2 November 2006; published 22 March 2007

Wegrow Fe films on (4×2)-GaAs(100) at room temperature and lowsubstrate temperature (~130 K) and study their chemical structure by high-resolutionphotoelectron spectroscopy using synchrotron radiation. We find direct spectroscopic evidencefor the effective suppression of the outdiffusion of both Gaand As from the substrate by the low temperature growth.Further, the Fe film is found to be stable evenafter warming up to 400 K. The thermal stability of theFe film has kinetic origin; the diffusion of both Gaand As from the substrate through the already existing Fefilm is expected to proceed via bulk diffusion that ismuch less efficient and thus a rate limiting process.

URL:	http://link.aps.org/doi/10.1103/PhysRevB.75.125421
DOI:	10.1103/PhysRevB.75.125421
PACS:	79.60.Jv; 82.65.+r; 72.25.Mk 79.60.Jv Photoelectron spectra of interfaces; heterostructures; nanostructures 82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces 72.25.Mk Spin transport through interfaces YEAR: 2007
KEYWORDS:	iron, metallic thin films, diffusion, chemical structure, photoelectron spectra, thermal stability

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