Pure spin currents induced by spin-dependent scattering processes in SiGe quantum well structures

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S. D. Ganichev,¹ S. N. Danilov,¹ V. V. Bel'kov,^1,2 S. Giglberger,¹ S. A. Tarasenko,² E. L. Ivchenko,² D. Weiss,¹ W. Jantsch,³ F. Schäffler,³ D. Gruber,³ and W. Prettl¹
¹Fakultät Physik, Universität Regensburg, 93040 Regensburg, Germany
²A.F. Ioffe Physico-Technical Institute, Russian Academy of Sciences, 194021 St. Petersburg, Russia
³Institut für Halbleiter und Festkörperphysik, Johannes-Kepler Universität Linz, A-4040 Linz, Austria

Received 30 October 2006; revised 21 December 2006; published 13 April 2007

Weshow that spin-dependent electron-phonon interaction in the energy relaxation ofa two-dimensional electron gas results in equal and oppositely directedcurrents in the spin-up and spin-down subbands yielding a purespin current. In our experiments on SiGe heterostructures the purespin current is converted into an electric current applying amagnetic field that lifts the cancellation of the two partialcharge flows. A microscopic theory of this effect, taking accountof the asymmetry of the relaxation process, is developed andis in good agreement with the experimental data.

URL:	http://link.aps.org/doi/10.1103/PhysRevB.75.155317
DOI:	10.1103/PhysRevB.75.155317
PACS:	73.21.Fg; 72.25.Fe; 78.67.De; 73.63.Hs 73.21.Fg Quantum wells (electron states/collective excitations) 72.25.Fe Optical creation of spin polarized carriers 78.67.De Optical properties of quantum wells 73.63.Hs Quantum wells (electronic transport) YEAR: 2007
KEYWORDS:	Ge-Si alloys, semiconductor materials, semiconductor quantum wells, electron-phonon interactions, two-dimensional electron gas, spin polarised transport

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I. Zutić, J. Fabian, and S. Das Sarma, Rev. Mod. Phys. 76, 323 (2004).
[JETP Lett. 39, 78 (1984)].
Z. Wilamowski, W. Jantsch, H. Malissa, and U. Rössler, Phys. Rev. B 66, 195315 (2002).
A. M. Tyryshkin, S. A. Lyon, W. Jantsch, and F. Schäffler, Phys. Rev. Lett. 94, 126802 (2005).
S. D. Ganichev, U. Rössler, W. Prettl, E. L. Ivchenko, V. V. Bel'kov, R. Neumann, K. Brunner, and G. Abstreiter, Phys. Rev. B 66, 075328 (2002).
C. Tahan, M. Friesen, and R. Joynt, Phys. Rev. B 66, 035314 (2002).
Z. Wilamowski and W. Jantsch, Phys. Rev. B 69, 035328 (2004).
M. M. Glazov, Phys. Rev. B 70, 195314 (2004).
C. Tahan and R. Joynt, Phys. Rev. B 71, 075315 (2005).
E. Ya. Sherman, Appl. Phys. Lett. 82, 209 (2003).
F. A. Baron, A. A. Kiselev, H. D. Robinson, K. W. Kim, K. L. Wang, and E. Yablonovitch, Phys. Rev. B 68, 195306 (2003).
H. Malissa, W. Jantsch, M. Mühlberger, F. Schäffler, Z. Wilamowski, M. Draxler, and P. Bauer, Appl. Phys. Lett. 85, 1739 (2004).
S. D. Ganichev, E. L. Ivchenko, S. N. Danilov, J. Eroms, W. Wegscheider, D. Weiss, and W. Prettl, Phys. Rev. Lett. 86, 4358 (2001).
M. Bieler, N. Laman, H. M. van Driel, and A. L. Smirl, Appl. Phys. Lett. 86, 061102 (2005).
C. L. Yang, H. T. He, Lu Ding, L. J. Cui, Y. P. Zeng, J. N. Wang, and W. K. Ge, Phys. Rev. Lett. 96, 186605 (2006).
J. Hübner, W. W. Rühle, M. Klude, D. Hommel, R. D. R. Bhat, J. E. Sipe, and H. M. van Driel, Phys. Rev. Lett. 90, 216601 (2003).
M. J. Stevens, A. L. Smirl, R. D. R. Bhat, A. Najmaie, J. E. Sipe, and H. M. van Driel, Phys. Rev. Lett. 90, 136603 (2003).
H. Zhao, X. Pan, A. L. Smirl, R. D. R. Bhat, A. Najmaie, J. E. Sipe, and H. M. van Driel, Phys. Rev. B 72, 201302(R) (2005).
J. Wunderlich, B. Kaestner, J. Sinova, and T. Jungwirth, Phys. Rev. Lett. 94, 047204 (2005).
S. A. Tarasenko, Phys. Rev. B 73, 115317 (2006).
J. E. Hirsch, Phys. Rev. Lett. 83, 1834 (1999).