Chemisorption of acetic acid on Si(100)-2×1 at room temperature

Abstract

References (29)

Citing Articles

Download: PDF (384 kB) or Buy this Article (US$25) (Use Article Pack)

Han-Koo Lee,¹ Ki-jeong Kim,^2,3 Jin-hee Han,¹ Tai-Hee Kang,² J. W. Chung,¹ and Bongsoo Kim^1,2
¹Department of Physics, POSTECH, San 31, Hyojadong, Namgu, Pohang, Kyung-Buk 790-784, Republic of Korea
²Pohang Accelerator Laboratory, San 31, Hyojadong, Namgu, Pohang, Kyung-Buk 790-784, Republic of Korea
³Department of Chemistry and School of Molecular Science (BK21), Korea Advanced Institute of Science and Technology, 355 Gwahangno, Yuseong-gu, Daejeon 305-701, Republic of Korea

Received 28 October 2007; published 14 March 2008

Wehave investigated adsorption of acetic acid on Si(100)-2×1 at roomtemperature using high-resolution photoemission spectroscopy and near edge x-ray adsorptionfine structure (NEXAFS) measurements in the partial electron yield mode.At room temperature, an acetic-acid molecule is found to chemisorbon Si(100)-2×1 surface through the formation of the O [Single Bond] H dissociationstructure. NEXAFS was conducted to characterize the adsorption geometry ofacetic acid on Si(100). The ^* orbital of the C [Double Bond] Obond shows a good angle dependence in carbon K-edge NEXAFSspectra, and we estimate the adsorption angle between chemisorbed aceticacid of CO bond and the Si(100) surface normal as~41°±2° using an analytical solution of NEXAFS intensity.

URL:	http://link.aps.org/doi/10.1103/PhysRevB.77.115324
DOI:	10.1103/PhysRevB.77.115324
PACS:	68.43.-h 68.43.-h Chemisorption/physisorption: adsorbates on surfaces YEAR: 2008
KEYWORDS:	adsorption, bonds (chemical), chemisorption, dissociation, organic compounds, photoelectron spectra, silicon, surface reconstruction, XANES

REFERENCES (29)

View in Separate Window/Tab

For access to fully linked references, you need to log in. For access to fully linked references, you need to Log in.

H.-J. Kim and J.-H. Cho, Phys. Rev. B 72, 195305 (2005).
S. Rah, T. Kang, Y. Chung, B. Kim, and K. Lee, Rev. Sci. Instrum. 66, 1751 (1995).
A. Fink, W. Widdra, W. Wurth, C. Keller, M. Stichler, A. Achleitner, G. Comelli, S. Lizzit, A. Baraldi, and D. Menzel, Phys. Rev. B 64, 045308 (2001).
D. A. Outka and J. Stöhr, J. Chem. Phys. 88, 3539 (1988).
A. V. Teplyakov, M. J. Kong, and S. F. Bent, J. Chem. Phys. 108, 4599 (1998).