Coherent Aharonov-Bohm oscillations in type-II (Zn,Mn)Te/ZnSe quantum dots

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I. R. Sellers,¹ V. R. Whiteside,¹ A. O. Govorov,² W. C. Fan,³ W-C. Chou,³ I. Khan,¹ A. Petrou,¹ and B. D. McCombe¹
¹Department of Physics, Fronzcak Hall, University at Buffalo SUNY, Buffalo, New York 14260, USA
²Department of Physics & Astronomy, Ohio University, Athens, Ohio 45701, USA
³Department of Electrophysics, National Chiao Tung University, Hsin Chu 30010, Taiwan, Republic of China

Received 20 March 2008; published 3 June 2008

Themagneto-photoluminescence of type-II (Zn,Mn)Te quantum dots is presented. As aresult of the type-II band alignment, Aharonov-Bohm (AB) oscillations inthe photoluminescence intensity are evident. In addition, an interesting interplaybetween the AB effect and the spin polarization in thesediluted magnetic semiconductor quantum dots is observed. The intensity ofthe AB oscillations increases with both magnetic field and thedegree of optical polarization, indicating that the suppression of spinfluctuations improves the coherence of the system.

URL:	http://link.aps.org/doi/10.1103/PhysRevB.77.241302
DOI:	10.1103/PhysRevB.77.241302
PACS:	78.55.Et; 78.67.Hc; 85.35.Be; 71.35.Ji 78.55.Et Photoluminescence in II-VI semiconductors 78.67.Hc Optical properties of quantum dots 85.35.Be Quantum well devices 71.35.Ji Excitons in magnetic fields; magnetoexcitons YEAR: 2008
KEYWORDS:	Aharonov-Bohm effect, electron spin polarisation, II-VI semiconductors, light polarisation, magneto-optical effects, manganese compounds, photoluminescence, semiconductor quantum dots, semimagnetic semiconductors, spectral line intensity, spin fluctuations, zinc compounds

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