Quantum ratchet effects induced by terahertz radiation in GaN-based two-dimensional structures

Abstract

References (36)

Citing Articles

Download: PDF (578 kB) or Buy this Article (US$25) (Use Article Pack)

W. Weber,¹ L. E. Golub,² S. N. Danilov,¹ J. Karch,¹ C. Reitmaier,¹ B. Wittmann,¹ V. V. Bel'kov,² E. L. Ivchenko,² Z. D. Kvon,³ N. Q. Vinh,⁴ A. F. G. van der Meer,⁴ B. Murdin,⁵ and S. D. Ganichev¹
¹Terahertz Center, University of Regensburg, 93040 Regensburg, Germany
²A.F. Ioffe Physico-Technical Institute, Russian Academy of Sciences, 194021 St. Petersburg, Russia
³Institute of Semiconductor Physics, Russian Academy of Sciences, 630090 Novosibirsk, Russia
⁴FOM Institute for Plasma Physics “Rijnhuizen,” P.O. Box 1207, NL-3430 BE Nieuwegein, The Netherlands
⁵University of Surrey, Guildford GU2 7XH, United Kingdom

Received 30 March 2008; revised 6 May 2008; published 4 June 2008

Photogalvaniceffects are observed and investigated in wurtzite (0001)-oriented GaN/AlGaN low-dimensionalstructures excited by terahertz radiation. The structures are shown torepresent linear quantum ratchets. Experimental and theoretical analysis exhibits thatthe observed photocurrents are related to the lack of aninversion center in the GaN-based heterojunctions.

URL:	http://link.aps.org/doi/10.1103/PhysRevB.77.245304
DOI:	10.1103/PhysRevB.77.245304
PACS:	73.21.Fg; 78.67.De; 73.63.Hs 73.21.Fg Quantum wells (electron states/collective excitations) 78.67.De Optical properties of quantum wells 73.63.Hs Quantum wells (electronic transport) YEAR: 2008
KEYWORDS:	aluminium compounds, gallium compounds, III-V semiconductors, photoconductivity, semiconductor heterojunctions, submillimetre waves

REFERENCES (36)

View in Separate Window/Tab

For access to fully linked references, you need to log in. For access to fully linked references, you need to Log in.

A. M. Glass, D. von der Linde, and T. J. Negran, Appl. Phys. Lett. 25, 233 (1974).
[Sov. Phys. JETP 56, 359 (1982)].
W. Weber, S. D. Ganichev, Z. D. Kvon, V. V. Bel'kov, L. E. Golub, S. N. Danilov, D. Weiss, W. Prettl, H.-I. Cho, and J.-H. Lee, Appl. Phys. Lett. 87, 262106 (2005).
X. W. He, B. Shen, Y. Q. Tang, N. Tang, C. M. Yin, F. J. Xu, Z. J. Yang, G. Y. Zhang, Y. H. Chen, C. G. Tang, and Z. G. Wang, Appl. Phys. Lett. 91, 071912 (2007).
Y. Q. Tang, B. Shen, X. W. He, K. Han, N. Tang, W. H. Chen, Z. J. Yang, G. Y. Zhang, Y. H. Chen, C. G. Tang, Z. G. Wang, K. S. Cho, and Y. F. Chen, Appl. Phys. Lett. 91, 071920 (2007).
K. S. Cho, C.-T. Liang, Y. F. Chen, Y. Q. Tang, and B. Shen, Phys. Rev. B 75, 085327 (2007).
G. M. H. Knippels, X. Yan, A. M. MacLeod, W. A. Gillespie, M. Yasumoto, D. Oepts, and A. F. G. van der Meer, Phys. Rev. Lett. 83, 1578 (1999).
N. V. Smith, Phys. Rev. B 64, 155106 (2001).
K. S. Cho, Tsai-Yu Huang, Hong-Syuan Wang, Ming-Gu Lin, Tse-Ming Chen, C.-T. Liang, Y. F. Chen, and Ikai Lo, Appl. Phys. Lett. 86, 222102 (2005).
N. Tang, B. Shen, M. J. Wang, K. Han, Z. J. Yang, K. Xu, G. Y. Zhang, T. Lin, B. Zhu, W. Z. Zhou, and J. H. Chu, Appl. Phys. Lett. 88, 172112 (2006).
N. Thillosen, Th. Schäpers, N. Kaluza, H. Hardtdegen, and V. A. Guzenko, Appl. Phys. Lett. 88, 022111 (2006).
S. Schmult, M. J. Manfra, A. Punnoose, A. M. Sergent, K. W. Baldwin, and R. J. Molnar, Phys. Rev. B 74, 033302 (2006).
R. Cingolani, A. Botchkarev, H. Tang, H. Morkoc, G. Traetta, G. Coli, M. Lomascolo, A. Di Carlo, F. Della Sala, and P. Lugli, Phys. Rev. B 61, 2711 (2000).
V. I. Litvinov, Phys. Rev. B 68, 155314 (2003).
[Sov. Phys. Solid State 31, 1299 (1989)].
N. A. Sinitsyn, Q. Niu, and A. H. MacDonald, Phys. Rev. B 73, 075318 (2006).
S. A. Tarasenko, Phys. Rev. B 73, 115317 (2006).
[Sov. Phys. Solid State 30, 418 (1988)].
L. E. Golub and E. L. Ivchenko, Phys. Rev. B 69, 115333 (2004).
[Sov. Phys. Solid State 31, 63 (1989)].
Zhongqin Yang and Zhizhong Xu, Phys. Rev. B 54, 17577 (1996).
R. Beresford, J. Appl. Phys. 95, 6216 (2004).