Resonant circular photogalvanic effect in GaN/AlGaN heterojunctions

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B. Wittmann,¹ L. E. Golub,² S. N. Danilov,¹ J. Karch,¹ C. Reitmaier,¹ Z. D. Kvon,³ N. Q. Vinh,⁴ A. F. G. van der Meer,⁴ B. Murdin,⁵ and S. D. Ganichev¹
¹Terahertz Center, University of Regensburg, 93040 Regensburg, Germany
²A.F. Ioffe Physico-Technical Institute, Russian Academy of Sciences, 194021 St. Petersburg, Russia
³Institute of Semiconductor Physics, Russian Academy of Sciences, 630090 Novosibirsk, Russia
⁴FOM Institute for Plasma Physics “Rijnhuizen”, P.O. Box 1207, NL-3430 BE Nieuwegein, The Netherlands
⁵University of Surrey, Guildford, GU2 7XH, United Kingdom

Received 16 September 2008; published 26 November 2008

Theresonant circular photogalvanic effect is observed in wurtzite (0001)-oriented GaNlow-dimensional structures excited by infrared radiation. The current is inducedby angular-momentum transfer of photons to the photoexcited electrons atresonant intersubband optical transitions in a GaN/AlGaN heterojunction. The signalreverses upon the reversal of the radiation helicity or, atfixed helicity, when the propagation direction of the photons isreversed. Making use of the tunability of the free-electron laserFELIX, we demonstrate that the current direction changes by sweepingthe photon energy through the intersubband resonance condition, in agreementwith theoretical considerations.

URL:	http://link.aps.org/doi/10.1103/PhysRevB.78.205435
DOI:	10.1103/PhysRevB.78.205435
PACS:	73.21.Fg; 78.67.De; 73.63.Hs; 72.25.Dc 73.21.Fg Quantum wells (electron states/collective excitations) 78.67.De Optical properties of quantum wells 73.63.Hs Quantum wells (electronic transport) 72.25.Dc Spin polarized transport in semiconductors YEAR: 2008
KEYWORDS:	gallium compounds, III-V semiconductors, photoconductivity, semiconductor heterojunctions, wide band gap semiconductors

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