Phys. Rev. B 79, 100405(R) (2009) [4 pages]
Absence of temperature dependence of the valence-band spectrum of Co2MnSi
Abstract
References (28)
Citing Articles
K. Miyamoto, 1 A. Kimura, 2 Y. Miura, 3 M. Shirai, 3 M. Ye, 2 Y. Cui, 1 K. Shimada, 1 H. Namatame, 1 M. Taniguchi, 1,2 Y. Takeda, 4 Y. Saitoh, 4 E. Ikenaga, 5 S. Ueda, 6 K. Kobayashi, 6 and T. Kanomata71Hiroshima Synchrotron Radiation Center, Hiroshima University, 2-313 Kagamiyama, Higashi-Hiroshima 739-0046, Japan
2Graduate School of Science, Hiroshima University, 1-3-1 Kagamiyama, Higashi-Hiroshima 739-8526, Japan
3Research Institute of Electrical Communication, Tohoku University, Katahira 2-1-1, Aoba-ku, Sendai 980-8577, Japan
4Japan Atomic Energy Agency/SPring-8, Sayo, Hyogo 679-5198, Japan
5Japan Synchrotron Radiation Research Institute/SPring-8, Sayo, Hyogo 679-5198, Japan
6NIMS Beamline Station at SPring-8, National Institute for Materials Science, Sayo, Hyogo 679-5148, Japan
7Faculty of Engineering, Tohoku Gakuin University, Tagajo, Miyagi 985-8537, Japan

Received 27 October 2008; revised 20 January 2009; published 23 March 2009
Valence-band electronic structure of Co2MnSi has been revealed by photoelectron spectroscopy utilizing hard x-ray synchrotron radiation. We have obtained a good correspondence between experimental valence-band spectra and theoretical density of states calculated with generalized gradient aprroximation. However, no distinct temperature dependence has been observed for the experimental valence band, which requires reexamination of the explanation based on the dynamical mean-field theory for the rapid decrease in tunneling magnetoresistance ratio with increasing temperature.
©2009 The American Physical Society
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