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Phys. Rev. B 80, 073302 (2009) [4 pages]

Interlayer correlation of embedded quantum-dot arrays through their surface strain energy distributions

Ernie Pan,1 Yu Zou,1 Peter W. Chung,2 and Yan Zhang1
1Computer Modeling and Simulation Group, College of Engineering, University of Akron, Akron, Ohio 44325, USA
2U.S. Army Research Laboratory, Aberdeen Proving Ground, Maryland 21005, USA

Received 6 June 2009; revised 21 July 2009; published 17 August 2009

We propose an interlayer correlation of multilayer quantum-dot (QD) distributions from a rigorous strain energy calculation. This leads to a map of correlations, or interlayer alignment, based solely on lateral and vertical spacing (xdist/b versus hdist/h). We identify four distinct correlation regimes—aligned correlation, antialigned correlation, noncorrelation, and the transition zone between the aligned and antialigned correlation. Our prediction matches well with available experimental data for a broad range of semiconductors with low elastic anisotropy [A=2C44/(C11−C12)<2] and can further predict the QD array distribution for those with high elastic anisotropy (A>=2) by a simple shift in hdist/h. The agreement spans both IV-VI and III-V systems. Moreover, the aligned correlation regime produces a large decay in strain energy magnitudes in subsequently grown layers, which may contribute to their observed larger nucleation domains.

©2009 The American Physical Society

URL: http://link.aps.org/doi/10.1103/PhysRevB.80.073302
DOI: 10.1103/PhysRevB.80.073302
PACS: 68.65.Ac
  • 68.65.Ac
    Multilayers (structure and nonelectronic properties)
  • YEAR: 2009
KEYWORDS: III-V semiconductors, IV-VI semiconductors, multilayers, nucleation, semiconductor quantum dots, surface energy

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