Phys. Rev. B 80, 073302 (2009) [4 pages]
Interlayer correlation of embedded quantum-dot arrays through their surface strain energy distributions
Abstract
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Ernie Pan, 1 Yu Zou, 1 Peter W. Chung, 2 and Yan Zhang11Computer Modeling and Simulation Group, College of Engineering, University of Akron, Akron, Ohio 44325, USA
2U.S. Army Research Laboratory, Aberdeen Proving Ground, Maryland 21005, USA
Received 6 June 2009; revised 21 July 2009; published 17 August 2009
We propose an interlayer correlation of multilayer quantum-dot (QD) distributions from a rigorous strain energy calculation. This leads to a map of correlations, or interlayer alignment, based solely on lateral and vertical spacing (xdist/b versus hdist/h). We identify four distinct correlation regimes—aligned correlation, antialigned correlation, noncorrelation, and the transition zone between the aligned and antialigned correlation. Our prediction matches well with available experimental data for a broad range of semiconductors with low elastic anisotropy [A=2C44/(C11−C12)<2] and can further predict the QD array distribution for those with high elastic anisotropy (A 2) by a simple shift in hdist/h. The agreement spans both IV-VI and III-V systems. Moreover, the aligned correlation regime produces a large decay in strain energy magnitudes in subsequently grown layers, which may contribute to their observed larger nucleation domains.
©2009 The American Physical Society
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