Electric field tuning of spin-orbit coupling in KTaO₃ field-effect transistors

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H. Nakamura and T. Kimura
Division of Materials Physics, Graduate School of Engineering Science, Osaka University, Toyonaka, Osaka 560-8531, Japan

Received 9 September 2009; published 28 September 2009

Wereport on the observation of weak antilocalization associated with largespin-orbit coupling in a tunable d electron system: a quasi-two-dimensionalelectron gas formed in a KTaO₃ field-effect transistor. We findthat spin-precession length of electrons can be tuned by gatevoltage V_G and is as short as tens of nanometersat large V_G. Our results show that 5d transition-metal compoundshaving strong atomic spin-orbit couplings induced by heavy 5d elementscould be utilized to electrically manipulate spins in nanoscale spintronicdevices.

URL:	http://link.aps.org/doi/10.1103/PhysRevB.80.121308
DOI:	10.1103/PhysRevB.80.121308
PACS:	85.75.-d; 73.20.Fz; 73.40.Qv 85.75.-d Magnetoelectronics; spintronics 73.20.Fz Weak or Anderson localization (surface/interface states) 73.40.Qv Electrical properties of metal-insulator-semiconductor structures YEAR: 2009
KEYWORDS:	insulated gate field effect transistors, magnetoelectronics, potassium compounds, spin-orbit interactions, two-dimensional electron gas

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