Phys. Rev. B 80, 153306 (2009) [4 pages]
Surface metallization on Si(001) at elevated temperatures studied by angle-resolved photoemission spectroscopy and near-edge x-ray absorption fine structure: Effect of thermal adatoms
Abstract
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C. Jeon, 1 C. C. Hwang, 2 T.-H. Kang, 2 K.-J. Kim, 2 B. Kim, 2,3 Y. Kim, 4 D. Y. Noh, 4 and C.-Y. Park11Department of Physics and Center for Nanotubes and Nanostructured Composites (CNNC) and SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon 440-746, Republic of Korea
2Beamline Research Division, Pohang Accelerator Laboratory (PAL), Pohang University of Science and Technology, Pohang, Kyungbuk 790-784, Republic of Korea
3Department of Physics, Pohang University of Science and Technology, Pohang, Kyungbuk 790-784, Republic of Korea
4Department of Materials Science and Engineering, and School of Photon Science and Technology, Gwangju Institute of Science and Technology, Gwangju 500-712, Republic of Korea
Received 29 September 2008; revised 29 September 2009; published 20 October 2009
We report the metallization of the Si(001)2×1 surface at elevated temperatures using angle-resolved photoemission spectroscopy (ARPES) and near-edge x-ray absorption fine structure (NEXAFS). A metallic state (Sm) over the EF, which corresponds to the empty ( *) state of the 2×1 asymmetric dimer model, increases in the ARPES spectra, while the * state decreases in the NEXAFS spectra with increasing temperature. Since Sm is observed even at 400 K, the structural phase transition at ~900 K [Phys. Rev. Lett. 91, 126103 (2003); Phys. Rev. Lett. 77, 3869 (1996)] is not related to the metallization. Thermal excitation seems to be too small to detect in ARPES in initial stage of the metallization and cannot account for the different behavior of Sm and the filled surface state of the up-dimer upon oxidation. We suggest, based on the existence of Sm even at 400 K and the oxidation behavior, that the metallization is attributed to thermal adatoms.
©2009 The American Physical Society
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