Modification of Surface States in Ultrathin Films via Hybridization with the Substrate: A Study of Ag on Ge

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S.-J. Tang, T. Miller, and T.-C. Chiang
Department of Physics, University of Illinois at Urbana-Champaign, 1110 West Green Street, Urbana, Illinois 61801-3080, USA
Frederick Seitz Materials Research Laboratory, University of Illinois at Urbana-Champaign, 104 South Goodwin Avenue, Urbana, Illinois 61801-2902, USA

Received 18 July 2005; published 24 January 2006

TheShockley surface state of Ag(111) develops unusual band dispersion relationsfor Ag films of decreasing thicknesses on Ge(111), as observedby angle-resolved photoemission. Its parabolic dispersion in the thick-film limitshifts toward higher binding energies and splits into multiple bandswith dispersions that reflect the valence band structure of Geincluding the heavy-hole, light-hole, and split-off bands. The results areexplained in terms of a hybridization interaction between the Agsurface state and the Ge substrate states.

URL:	http://link.aps.org/doi/10.1103/PhysRevLett.96.036802
DOI:	10.1103/PhysRevLett.96.036802
PACS:	73.21.Fg; 68.65.Fg; 79.60.Dp 73.21.Fg Quantum wells (electron states/collective excitations) 68.65.Fg Quantum wells (structure and nonelectronic properties) 79.60.Dp Photoelectron spectra of adsorbed layers and thin films YEAR: 2006
KEYWORDS:	photoemission, metallic thin films, semiconductor-metal boundaries, surface states, silver, germanium, elemental semiconductors, valence bands

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