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Phys. Rev. Lett. 96, 106601 (2006) [4 pages]

Photoinduced Transient Stark Spectroscopy in Organic Semiconductors: A Method for Charge Mobility Determination in the Picosecond Regime

J. Cabanillas-Gonzalez, T. Virgili, A. Gambetta, and G. Lanzani
IFN-CNR, Dipartimento di Fisica, ULTRAS-INFM-CNR, Politecnico di Milano, Milano 20133, Italy

T. D. Anthopoulos
Blackett Laboratory, Department of Physics, Imperial College London, London SW7 2BW, United Kingdom

D. M. de Leeuw
Philips Research Laboratories, Professor Holstlaan 4 (WAG 11), 5656 AA Eindhoven, The Netherlands
Received 13 October 2005; published 13 March 2006

Subpicosecond photoinduced Stark spectroscopy experiments are carried out for measuring charge carrier mobility in organic semiconductors. The technique is demonstrated in state-of-art devices based on methanofullerene. The transient mobility of photogenerated charge carriers is measured in the picosecond time domain. Electric field dependent mobility is observed from the earliest time scales. In addition, two distinct transport regimes are revealed: a short-lived state, approximately 10 ps, of high mobility and a transient towards the trap limited transport, associated with the mesoscopic structure of the medium.

©2006 The American Physical Society

URL: http://link.aps.org/doi/10.1103/PhysRevLett.96.106601
DOI: 10.1103/PhysRevLett.96.106601
PACS: 72.80.Rj; 72.80.Ng; 78.47.+p; 78.66.Tr
  • 72.80.Rj
    Electrical conductivity of fullerenes and related materials
  • 72.80.Ng
    Electrical conductivity of disordered solids including amorphous and glassy semiconductors
  • 78.47.+p
    Time-resolved optical spectroscopies and other ultrafast optical measurements in condensed matter
  • 78.66.Tr
    Optical properties of fullerenes and related materials (thin films)
  • YEAR: 2006
KEYWORDS: carrier mobility, organic semiconductors, Stark effect, high-speed optical techniques, fullerene compounds, semiconductor thin films

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