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Phys. Rev. Lett. 96, 187402 (2006) [4 pages]Nonlinear Terahertz Response of n-Type GaAs
Received 28 February 2006; published 12 May 2006
Excitation of an n-type GaAs layer by intense ultrashort terahertz pulses causes coherent emission at 2 THz. Phase-resolved nonlinear propagation experiments show a picosecond decay of the emitted field, despite the ultrafast carrier-carrier scattering at a sample temperature of 300 K. While the linear THz response is in agreement with the Drude response of free electrons, the nonlinear response is dominated by the super-radiant decay of optically inverted impurity transitions. A quantum mechanical discrete state model using the potential of the disordered impurities accounts for all experimental observations. ©2006 The American Physical Society
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