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Phys. Rev. Lett. 98, 257603 (2007) [4 pages]Elastic Stabilization of a Single-Domain Ferroelectric State in Nanoscale Capacitors and Tunnel Junctions
Received 14 November 2006; published 22 June 2007
Taking into account the electrostrictive coupling between inhomogeneous polarization fluctuations and lattice strains in ferroelectric films, we show that, in heterostructures involving strained epitaxial films and metal electrodes, the single-domain state may remain stable against the transformation into a polydomain state down to the nanometer scale. This result indicates that the ferroelectric states with opposite remanent polarizations can be stabilized even in nanoscale capacitors and tunnel junctions, which opens the possibility of their application for memory storage. ©2007 The American Physical Society
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I. Kornev, H. Fu, and L. Bellaiche, Phys. Rev. Lett. 93, 196104 (2004). CITING ARTICLESFor access to citing articles, you need to log in.
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