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Phys. Rev. Lett. 98, 257603 (2007) [4 pages]

Elastic Stabilization of a Single-Domain Ferroelectric State in Nanoscale Capacitors and Tunnel Junctions

N. A. Pertsev1,2 and H. Kohlstedt1
1Institut für Festkörperforschung, Forschungszentrum Jülich, D-52425 Jülich, Germany
2A. F. Ioffe Physico-Technical Institute, Russian Academy of Sciences, 194021 St. Petersburg, Russia

Received 14 November 2006; published 22 June 2007

Taking into account the electrostrictive coupling between inhomogeneous polarization fluctuations and lattice strains in ferroelectric films, we show that, in heterostructures involving strained epitaxial films and metal electrodes, the single-domain state may remain stable against the transformation into a polydomain state down to the nanometer scale. This result indicates that the ferroelectric states with opposite remanent polarizations can be stabilized even in nanoscale capacitors and tunnel junctions, which opens the possibility of their application for memory storage.

©2007 The American Physical Society

URL: http://link.aps.org/doi/10.1103/PhysRevLett.98.257603
DOI: 10.1103/PhysRevLett.98.257603
PACS: 77.80.Dj; 77.55.+f
  • 77.80.Dj
    Ferroelectric domain structure; hysteresis
  • 77.55.+f
    Dielectric thin films
  • YEAR: 2007

See Also

Comment on “Elastic Stabilization of a Single-Domain Ferroelectric State in Nanoscale Capacitors and Tunnel Junctions”
A. M. Bratkovsky and A. P. Levanyuk
Phys. Rev. Lett. 100, 149701 (2008)

Pertsev and Kohlstedt Reply:
N. A. Pertsev and H. Kohlstedt
Phys. Rev. Lett. 100, 149702 (2008)

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Related Articles

  1. Comment on “Elastic Stabilization of a Single-Domain Ferroelectric State in Nanoscale Capacitors and Tunnel Junctions”
    A. M. Bratkovsky and A. P. Levanyuk
    Phys. Rev. Lett. 100, 149701 (2008)
  2. Pertsev and Kohlstedt Reply:
    N. A. Pertsev and H. Kohlstedt
    Phys. Rev. Lett. 100, 149702 (2008)


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