Electrostatic modification of novel materials

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C. H. Ahn
Department of Applied Physics,Yale University, New Haven, Connecticut 06520–8120, USA

A. Bhattacharya
Argonne National Laboratory, 9700 S. Cass Ave., Argonne, Illinois 60439, USA

M. Di Ventra
Department of Physics, University of California San Diego, La Jolla, California 92093, USA

J. N. Eckstein
Department of Physics, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801, USA

C. Daniel Frisbie
Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455, USA

M. E. Gershenson
Department of Physics and Astronomy, Rutgers, the State University of New Jersey, Piscataway, New Jersey 08854, USA

A. M. Goldman
School of Physics and Astronomy, University of Minnesota, Minneapolis, Minnesota 55455, USA

I. H. Inoue
Correlated Electron Research Center, National Institute of Advanced Industrial Science and Technology, AIST Tsukuba Central, Tsukuba, Japan

J. Mannhart
Experimentalphysik VI, Center for Electronic Correlations and Magnetism, Institute of Physics, Augsburg University, D-86135 Augsburg, Germany

Andrew J. Millis
Department of Physics, Columbia University, New York, New York 10027, USA

Alberto F. Morpurgo
Kavli Institute of Nanoscience, Delft University, Lorentzweg 1, 2628 CJ Delft, The Netherlands

Douglas Natelson
Department of Physics and Astronomy, Rice University, Houston, Texas 77005, USA

Jean-Marc Triscone
Ecole de Physique, Département de Physiques de la Matière Condensée, 24 quai Ernest-Ansermet, 1211 Genève 4, Switzerland

Published 10 November 2006

Applicationof the field-effect transistor principle to novel materials to achieveelectrostatic doping is a relatively new research area. It mayprovide the opportunity to bring about modifications of the electronicand magnetic properties of materials through controlled and reversible changesof the carrier concentration without modifying the level of disorder,as occurs when chemical composition is altered. As well asproviding a basis for new devices, electrostatic doping can inprinciple serve as a tool for studying quantum critical behavior,by permitting the ground state of a system to betuned in a controlled fashion. In this paper progress inelectrostatic doping of a number of materials systems is reviewed.These include structures containing complex oxides, such as cuprate superconductorsand colossal magnetoresistive compounds, organic semiconductors, in the form ofboth single crystals and thin films, inorganic layered compounds, singlemolecules, and magnetic semiconductors. Recent progress in the field isdiscussed, including enabling experiments and technologies, open scientific issues andchallenges, and future research opportunities. For many of the materialsconsidered, some of the results can be anticipated by combiningknowledge of macroscopic or bulk properties and the understanding ofthe field-effect configuration developed during the course of the evolutionof conventional microelectronics. However, because electrostatic doping is an interfacialphenomenon, which is largely an unexplored field, real progress willdepend on the development of a better understanding of latticedistortion and charge transfer at interfaces in these systems.

URL:	http://link.aps.org/doi/10.1103/RevModPhys.78.1185
DOI:	10.1103/RevModPhys.78.1185
PACS:	73.90.+f; 72.90.+y; 73.43.Nq 73.90.+f Other topics in electronic structure and electrical properties of surfaces, interfaces, thin films, and low-dimensional structures (restricted to new topics in section 73) 72.90.+y Other topics in electronic transport in condensed matter (restricted to new topics in section 72) 73.43.Nq Quantum phase transitions (quantum Hall effect) YEAR: 2006
KEYWORDS:	semiconductor doping, doping, reviews, field effect transistors, semiconductor materials, superconducting materials, carrier density, crystal defects

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