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High temperature Hall-effect apparatus

Rev. Sci. Instrum. 55, 110 (1984); doi:10.1063/1.1137581

Issue Date: January 1984

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C. Wood, A. Lockwood, A. Chmielewski, J. Parker, and A. Zoltan
Jet Propulsion Laboratory, California Institute of Technology, 4800 Oak Grove Drive, Pasadena, California 91109
A high-temperature Hall-effect apparatus is described which allows measurements up to temperatures greater than 1200 K using the van der Pauw method. The apparatus was designed for measurements on refractory materials having high charge carrier concentrations and generally low mobilities. Pressure contacts are applied to the samples. Consequently, special contacting methods, peculiar to a specific sample material, are not required. The apparatus has been semiautomated to facilitate measurements. Results are presented on n- and p-type silicon. Review of Scientific Instruments is copyrighted by The American Institute of Physics.
History: Received 26 May 1983; accepted 26 September 1983
Permalink: http://link.aip.org/link/?RSINAK/55/110/1
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KEYWORDS and PACS

Keywords
PACS
  • 07.55.+x
    Specific instrumentation and techniques of general use in physics Magnetic instruments and techniques
  • YEAR: 1984

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PUBLICATION DATA

ISSN:
0034-6748 (print)   1089-7623 (online)
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REFERENCES (9)
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