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Improved external cavity design for cesium D1 (894 nm) diode laser

Rev. Sci. Instrum. 71, 4029 (2000); doi:10.1063/1.1319860

Issue Date: November 2000

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A. Andalkar, S. K. Lamoreaux, and R. B. Warrington
Department of Physics, Box 351560, University of Washington, Seattle, Washington 98195-1560
We have developed an external cavity diode laser for use near the cesium D1 transition at 894 nm, producing over 20 mW of single-mode power with a continuous tuning range of up to 25 GHz. Our mechanical design allows simple alignment and optimization of the cavity with very good passive stability, as temperature control of the diode is not coupled with changes in cavity length, and it could easily be used with diodes at other wavelengths. We detail the design and construction, and review the performance of the current system, which has been in operation for several years. ©2000 American Institute of Physics.
History: Received 26 February 1999; accepted 28 August 2000
Permalink: http://link.aip.org/link/?RSINAK/71/4029/1
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KEYWORDS and PACS

Keywords
PACS
  • 42.60.Da
    Optics Laser optical systems: design and operation Resonators, cavities, amplifiers, arrays, and rings
  • 42.55.Px
    Optics Lasers Semiconductor lasers; laser diodes
  • 42.60.By
    Optics Laser optical systems: design and operation Design of specific laser systems
  • YEAR: 2000

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PUBLICATION DATA

ISSN:
0034-6748 (print)   1089-7623 (online)
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REFERENCES (7)

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