Apparatus to measure wafer curvature for multilayer systems in a vacuum furnace
Rev. Sci. Instrum. 73, 1821 (2002); doi:10.1063/1.1455132
Issue Date: April 2002
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A laser-based technique for measuring the curvature of a multilayer/substrate couple is described. Unlike most wafer curvature systems, the instrument described measures the local curvature of the multilayer/substrate couple, correcting for the local topography of the substrate, rather than measuring changes in the average curvature of the multilayer/substrate couple. The apparatus has been designed specifically to perform biaxial zero-creep measurements at elevated temperatures in vacuum. It can also be used to examine the development of biaxial stresses during thermal cycling of thin films deposited on substrates. ©2002 American Institute of Physics.
| History: | Received 2 July 2001; accepted 7 January 2002 |
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http://link.aip.org/link/?RSINAK/73/1821/1 |
KEYWORDS and PACS
multilayers,
curvature measurement,
vacuum apparatus,
measurement by laser beam,
thermal stresses,
stress measurement
- 06.30.Bp
Metrology, measurements, and laboratory procedures Measurements common to several branches of physics and astronomy Spatial dimensions (e.g., position, lengths, volume, angles, and displacements) - 68.65.Ac
Surfaces and interfaces; thin films and low-dimensional systems (structure and nonelectronic properties) Low-dimensional, mesoscopic, and nanoscale systems: structure and nonelectronic properties Multilayers - YEAR: 2002
RELATED DATABASES
PUBLICATION DATA
0034-6748 (print)
1089-7623 (online)
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