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A 1 A laser driver in 0.35  µm complementary metal oxide semiconductor technology for a pulsed time-of-flight laser rangefinder

Rev. Sci. Instrum. 80, 104703 (2009); doi:10.1063/1.3242275

Published 7 October 2009

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Jan Nissinen and Juha Kostamovaara
Department of Electrical and Information Engineering, Electronics Laboratory, University of Oulu, P.O. Box 4500, Linnanmaa FIN-90014, Finland
An integrated complementary metal oxide semiconductor (CMOS) current pulse generator is presented which achieves an ampere-scale peak current pulse with a rise time and pulse width of less than 1 and 2.5 ns (pulse width at half maximum), respectively. The generator is implemented in a 0.35  µm CMOS process and consists of four parallel n-type metal oxide semiconductor transistors driven by a scaled buffer chain to achieve fast switching. ©2009 American Institute of Physics
History: Received 21 August 2009; accepted 13 September 2009; published 7 October 2009
Permalink: http://link.aip.org/link/?RSINAK/80/104703/1
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KEYWORDS and PACS

Keywords
PACS
  • 42.62.Eh
    Metrological applications of lasers
  • 42.79.Qx
    Optical range finders, remote sensing devices
  • 42.65.Re
    Ultrafast processes; optical pulse generation and pulse compression
  • 85.40.-e
    Microelectronics: LSI, VLSI, ULSI; integrated circuit fabrication technology
  • 06.30.Bp
    Spatial dimensions measurement
  • YEAR: 2009

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PUBLICATION DATA

ISSN:
0034-6748 (print)   1089-7623 (online)
Publisher:
AIP is a member of CrossRef AIP

REFERENCES (10)
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