Development of a surface conductivity measurement system for ultrahigh vacuum transmission electron microscope
Rev. Sci. Instrum. 80, 113702 (2009); doi:10.1063/1.3251272
Published 2 November 2009
You are not logged in to this journal. Log in
The surface conductivity measurement system using a micro-four-point probe (M4PP) had been developed for the ultrahigh vacuum transmission electron microscope (UHV-TEM). Since the current distribution in the sample crystals during the current voltage measurement by the M4PP is localized within the depth of several micrometers from the surface, the system is sensitive to the surface conductivity, which is related with the surface superstructure. It was installed in the main chamber of the TEM and the surface conductivity can be measured in situ. The surface structures were observed by reflection electron microscopy and diffraction (REM-RHEED). REM-RHEED enables us to observe the surface superstructures and their structure defects such as surface atomic steps and domain boundaries of the surface superstructure. Thus the effects of the defects on the surface conductivity can be investigated. In the present paper we present the surface conductivity measurement system and its application to the Si(111)-
×
-Ag surface prepared on the Si(111) vicinal surfaces. The result clearly showed that the surface conductivity was affected by step configuration.
©2009 American Institute of Physics
| History: | Received 8 July 2009; accepted 27 September 2009; published 2 November 2009 |
| Permalink: |
http://link.aip.org/link/?RSINAK/80/113702/1 |
KEYWORDS and PACS
domain boundaries,
electrical conductivity measurement,
reflection high energy electron diffraction,
silicon,
silver,
surface conductivity,
surface reconstruction,
transmission electron microscopy
- 06.30.Ka
Measurement of basic electromagnetic quantities - 73.25.+i
Surface conductivity and carrier phenomena - 07.78.+s
Electron, positron, and ion microscopes; electron diffractometers - 68.37.Lp
Transmission electron microscopy (TEM) of surfaces, interfaces and thin films - 68.35.B-
Structure of clean solid surfaces - YEAR: 2009
PUBLICATION DATA
0034-6748 (print)
1089-7623 (online)
REFERENCES (16)
For access to fully linked references, you need to log in.
For access to fully linked references, you need to Log in.
- I. Shiraki, F. Tanabe, R. Hobara, T. Nagao, and S. Hasegawa,
Surf. Sci. 493, 633 (2001) . - H. Grube, B. Craig Harrison, J. Jia, and J. J. Boland, Rev. Sci. Instrum. 72, 4388 (2001).
- H. Okamoto and D. Chen, Rev. Sci. Instrum. 72, 4398 (2001).
- O. Kubo, Y. Shingaya, M. Nakaya, M. Aono, and T. Nakayama, Appl. Phys. Lett. 88, 254101 (2006).
- H. Watanabe, C. Manabe, T. Shigematsu, and M. Shimizu, Appl. Phys. Lett. 78, 2928 (2001).
- O. Guise, H. Marbach, J. T. Yates, Jr., M. -C. Jung, and J. Levy, Rev. Sci. Instrum. 76, 045107 (2005).
- S. Yoshimoto, Y. Murata, K. Kubo, K. Tomita, K. Motoyoshi, T. Kimura, H. Okino, R. Hobara, I. Matsuda, S. Honda, M. Katayama, and S. Hasegawa,
Nano Lett. 7, 956 (2007) . - H. Okino, I. Matsuda, R. Hobara, Y. Hosomura, S. Hasegawa, and P. A. Bennett,
e-J. Surf. Sci. Nanotechnol. 3, 362 (2005) . - I. Matsuda, T. Hirahara, M. Ueno, R. Hobara, and S. Hasegawa, J. de Physique (France) IV 132, 57 (2006).
- T. Kanagawa, R. Hobara, I. Matsuda, T. Tanikawa, A. Natori, and S. Hasegawa, Phys. Rev. Lett. 91, 036805 (2003).
- I. Matsuda, M. Ueno, T. Hirahara, R. Hobara, H. Morikawa, C. Lui, and S. Hasegawa, Phys. Rev. Lett. 93, 236801 (2004).
- Y. Kondo, K. Yagi, K. Kobayashi, H. Kobayashi, Y. Yanaka, K. Kise, and T. Ohkawa,
Ultramicroscopy 36, 142 (1991) . - C. L. Petersen, F. Grey, I. Shiraki, and S. Hasegawa, Appl. Phys. Lett. 77, 3782 (2000).
- H. Minoda and K. Yagi, Phys. Rev. B 59, 2363 (1999).
- H. Minoda and K. Yagi,
Surf. Sci. 437, L761 (1999) . - H. Minoda, H. Yazawa, M. Morita, S. N. Takeda, and H. Daimon (unpublished).







