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High frequency dielectric properties distribution of BiFeO3 thin film using near-field microwave microscopy

Rev. Sci. Instrum. 80, 114701 (2009); doi:10.1063/1.3258201

Published 5 November 2009

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Xiao-Yu Zhang,1 Xuan-Cong Wang,2 Feng Xu,1 Yun-Gui Ma,1 and C. K. Ong2
1Temasek Laboratories, National University of Singapore, 10 Kent Ridge Crescent, Singapore 119260, Singapore
2Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117542, Singapore
A near-field scanning microwave microscopy (NSMM) is applied to investigate the local perpendicular dielectric information of single-phase multiferroic BiFeO3 thin film and single crystal LaAlO3 material. Our NSMM is composed of a vector network analyzer and a simple open-ended coaxial probe, which is quite different from the commercial probe with a lambda/4 coaxial resonator. The local permittivity is calculated quantitatively according to resonance frequency shift under the quasistatic microwave perturbation theory. We make use of the magnitude of reflection loss S11 to construct an image reflecting the distribution of dielectric constant of a material. A homogeneous permittivity is observed in LaAlO3 material and the inhomogeneous permittivity epsilon=215–250 for BiFeO3 film is depicted from the change of feedback signal S11 over an area of 100×100  µm2. ©2009 American Institute of Physics
History: Received 14 September 2009; accepted 13 October 2009; published 5 November 2009
Permalink: http://link.aip.org/link/?RSINAK/80/114701/1
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KEYWORDS and PACS

Keywords
PACS
  • 77.55.Nv
    Multiferroic/magnetoelectric films
  • 68.37.Ps
    Atomic force microscopy (AFM) of surfaces, interfaces and thin films
  • 77.22.Ch
    Permittivity (dielectric function)
  • 75.85.+t
    Magnetoelectric effects, multiferroics
  • 77.80.-e
    Ferroelectricity and antiferroelectricity
  • YEAR: 2010

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PUBLICATION DATA

ISSN:
0034-6748 (print)   1089-7623 (online)
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REFERENCES (13)
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  1. B. T. Rosner and D. W. van der Weide, Rev. Sci. Instrum. 73, 2505 (2002).
  2. C. Gao and X. -D. Xiang, Rev. Sci. Instrum. 69, 3846 (1998).
  3. Y. Chen, J. Gao, J. Lou, M. Liu, S. D. Yoon, A. L. Geiler, M. Nedoroscik, D. Heiman, N. X. Sun, C. Vittoria, and V. G. Harris, J. Appl. Phys. 105, 07A510 (2009).
  4. D. E. Steinhauer, C. P. Vlahacos, F. C. Wellstood, S. M. Anlage, C. Canedy, R. Ramesh, A. Stanishevsky, and J. Melngailis, Appl. Phys. Lett. 75, 3180 (1999).
  5. A. Imtiaz, T. Baldwin, H. T. Nembach, T. M. Wallis, and P. Kabos, Appl. Phys. Lett. 90, 243105 (2007).
  6. Z. Wang, M. A. Kelly, Z. X. Shen, L. Shao, W. K. Chu, and H. Edwards, Appl. Phys. Lett. 86, 153118 (2005).
  7. A. Tselev, S. M. Anlage, Z. Ma, and J. Melngailis, Rev. Sci. Instrum. 78, 044701 (2007).
  8. X. Y. Zhang, Q. Song, F. Xu, and C. K. Ong, Appl. Phys. Lett. 94, 022907 (2009).
  9. X. Y. Zhang, P. Wang, S. Sheng, F. Xu, and C. K. Ong, J. Appl. Phys. 104, 124110 (2008).
  10. A. Imtiaz and S. M. Anlage, J. Appl. Phys. 100, 044304 (2006).
  11. V. V. Talanov, A. Scherz, R. L. Moreland, and A. R. Schwartz, Appl. Phys. Lett. 88, 134106 (2006).
  12. H. F. S. S. Ansoft, 11, User Documentation (Ansoft Corporation, 2007).
  13. D. M. Pozar, Microwave Engineering (Addison-Wesley, New York, 1990).

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