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Atom-resolved scanning tunneling microscopy of (In,Ga)As quantum wires on GaAs(311)A

Source: Appl. Phys. Lett. 84, 1756 (2004); http://dx.doi.org/10.1063/1.1664018

Issue Date: 15 March 2004

KEYWORDS and PACS
Keywords
PACS
  • 68.37.Ef
    Scanning tunneling microscopy of surfaces, interfaces and thin films including chemistry induced with STM
  • 81.05.Ea
    III–V semiconductors: fabrication, treatment, testing and analysis
  • 68.65.La
    Quantum wires (structure and nonelectronic properties)
  • 68.55.Ac
    Thin film nucleation and growth: microscopic aspects
  • 81.15.Hi
    Molecular, atomic, ion, and chemical beam epitaxy
  • YEAR: 2004
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PUBLICATION DATA
ISSN:
1553-9644 (online)
Publisher:
AIP is a member of CrossRef AIP
H. Wen, Z. M. Wang, and G. J. Salamo
Physics Department, University of Arkansas, Fayetteville, Arkansas 72701
Generally (In,Ga)As strained growth on GaAs surfaces results in zero-dimensional quantum dots. The formation of one-dimensional quantum wires is demonstrated during (In,Ga)As molecular-beam-epitaxial growth on GaAs(311)A at high temperature. The wires are running along the [–233] direction. Atomically resolved scanning tunneling microscopy images reveal that the wires are triangular-shaped in cross section and the two side bonding facets are {11,5,2}. These results are discussed in terms of a mechanism of strain-driven facet formation. ©2004 American Institute of Physics.
History: Received 2 October 2003; accepted 7 January 2004
Digital Object Identifier: http://dx.doi.org/10.1063/1.1664018

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