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Structured epitaxial graphene growth on SiC by selective graphitization using a patterned AlN cap

Source: Appl. Phys. Lett. 96, 082112 (2010); doi:10.1063/1.3334683

Published 25 February 2010

KEYWORDS and PACS
Keywords
PACS
  • 81.16.-c
    Methods of nanofabrication and processing
  • 72.20.My
    Galvanomagnetic and other magnetotransport effects (semiconductors/insulators)
  • 78.30.Hv
    Infrared and Raman spectra in nonmetallic inorganics
  • 81.05.ue
    Graphene
  • YEAR: 2010
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PUBLICATION DATA
ISSN:
1553-9644 (online)
Publisher:
AIP is a member of CrossRef AIP
Miguel Rubio-Roy,1 Farhana Zaman,2 Yike Hu,1 Claire Berger,1 Michael W. Moseley,2 James D. Meindl,2 and Walt A. de Heer1
1School of Physics, Georgia Institute of Technology, Atlanta, Georgia 30332, USA
2School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, USA
Electronic quality epitaxial graphene has been selectively grown on silicon carbide capped with a patterned aluminum nitride layer, providing a pathway to produce device structures that avoid lithographic patterning of graphene itself. Patterning of the cap exposes SiC where graphene will grow. Capped areas inhibit graphene growth and withstand graphitization temperatures up to 1420°C under 100 Pa of argon pressure. Graphene Hall bars were fabricated and characterized by scanning Raman spectroscopy, ellipsometry, and transport measurements. Hall-mobility is about 600  cm2/V s and can be further enhanced by fine tuning the argon pressure and improving the quality of SiC surface prior to graphitization. ©2010 American Institute of Physics
History: Received 2 December 2009; accepted 2 February 2010; published 25 February 2010
Permalink: http://link.aip.org/link/?APPLAB/96/082112/1

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