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Divacancy-nitrogen-assisted transition metal dispersion and hydrogen adsorption in defective graphene: A first-principles study

Source: Phys. Rev. B 81, 085441 (2010); doi:10.1103/PhysRevB.81.085441

Published 25 February 2010

PACS
  • 68.43.Bc
    Ab initio calculations of adsorbate structure and reactions
  • 61.48.De
    Structure of carbon nanotubes, boron nanotubes and closely related graphite-like systems
  • 71.15.Nc
    Total energy and cohesive energy calculations (condensed matter)
  • 81.05.Zx
    New materials: theory, design, and fabrication
  • YEAR: 2010
PUBLICATION DATA
ISSN:
1553-9644 (online)
Publisher:
AIP is a member of CrossRef APS
Woon Ih Choi,1 Seung-Hoon Jhi,2 Kwiseon Kim,1 and Yong-Hyun Kim1,3
1National Renewable Energy Laboratory, Golden, Colorado 80401, USA
2Department of Physics and Division of Advanced Materials, Pohang University of Science and Technology, Pohang 790-784, Korea
3Graduate School of Nanoscience and Technology (WCU), Korea Advanced Institute of Science and Technology, Daejeon 305-701, Korea

We propose a route to dispersing hydrogen-adsorbing transition metals (TMs) on a large scale onto vacancy-engineered defective graphenes by employing natural carbon-nitrogen-TM complexes, i.e., TM-containing porphyrins. Based on first-principles density-functional calculations, the TM-porphyrin core—made of one central TM and four surrounding nitrogen atoms—can be effectively generated by three defect-engineering processes of graphenes: (1) creation of carbon divacancies, (2) nitrogen substitution of unsaturated carbons, and (3) TM incorporation. The atomistically dispersed Sc, Ti, and V are able to adsorb hydrogen molecules as strongly as 0.2–0.4 eV with the Kubas coordination. The Fe-porphyrin-like unit in graphenes can also have the Kubas adsorption of hydrogen, if the exchange splitting is reduced by a compressive in-plane strain. ©2010 The American Physical Society
History: Received 20 May 2009; revised 22 December 2009; published 25 February 2010
Permalink: http://link.aps.org/abstract/PRB/v81/e085441
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