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Raman Characterization and Polarity Tuning of Aligned Single-Walled Carbon Nanotubes on Quartz

Source: Jpn. J. Appl. Phys. 49, 02BC02 (2010); doi:10.1143/JJAP.49.02BC02

Issue Date: 8 March 2010

PUBLICATION DATA
ISSN:
1553-9644 (online)
Publisher:
AIP is a member of CrossRef JSAP
Bo Lei
Department of Electrical Engineering–Electrophysics, University of Southern California, Los Angeles, CA 90089, U.S.A.

Koungmin Ryu
Department of Electrical Engineering–Electrophysics, University of Southern California, Los Angeles, CA 90089, U.S.A.

Lewis Gomez De-Arco
Department of Electrical Engineering–Electrophysics, University of Southern California, Los Angeles, CA 90089, U.S.A.

Song Han
Department of Electrical Engineering, University of California at Los Angeles, Los Angeles, CA 94035, U.S.A.

Alexander Badmaev
Department of Electrical Engineering–Electrophysics, University of Southern California, Los Angeles, CA 90089, U.S.A.

Damon Farmer
Department of Chemistry and Chemical Biology Cambridge, Harvard University, Cambridge, MA 02138, U.S.A.

Kevin Kim
Department of Chemistry and Chemical Biology Cambridge, Harvard University, Cambridge, MA 02138, U.S.A.

Roy Gordon
Department of Chemistry and Chemical Biology Cambridge, Harvard University, Cambridge, MA 02138, U.S.A.

Kang L. Wang
Department of Electrical Engineering, University of California at Los Angeles, Los Angeles, CA 94035, U.S.A.

Chongwu Zhou
Department of Electrical Engineering–Electrophysics, University of Southern California, Los Angeles, CA 90089, U.S.A.
Raman characterization has been employed to study key features of highly aligned single-walled carbon nanotubes grown on quartz substrates. The nanotubes are observed to possess an estimated metallic/semiconducting ratio of $1:2.7$, and Raman spectra also confirm the high integrity of nanotubes before and after being transferred from quartz to Si/SiO2 substrates. Based on the as-grown and the transferred aligned nanotubes, we have further fabricated top- and back-gated nanotube devices, respectively. The top-gated transistors exhibit ambipolar transport characteristics with high transconductance, small subthreshold swing of 110 mV/decade and on/off ratio of $10^{7}$, while the back-gated transistors show unipolar p-type characteristics. Furthermore, we have demonstrated polarity tuning to produce both predominately n- and p-type top-gated carbon nanotube transistors by controlling the polarity of gate voltage during electrical breakdown, which has great potential for building complementary carbon nanotube circuits. ©2010

(As supplied by publisher.)

Permalink: http://dx.doi.org/10.1143/JJAP.49.02BC02
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