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Electrical Properties of Carbon Nanotube Field-Effect Transistors with Multiple Channels Measured by Scanning Gate Microscopy

Source: Jpn. J. Appl. Phys. 49, 02BD02 (2010); doi:10.1143/JJAP.49.02BD02

Issue Date: 8 March 2010

PUBLICATION DATA
ISSN:
1553-9644 (online)
Publisher:
AIP is a member of CrossRef JSAP
Yuki Okigawa
Department of Quantum Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan

Shigeru Kishimoto
Department of Quantum Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan
Venture Business Laboratory, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8601, Japan

Yutaka Ohno
Department of Quantum Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan

Takashi Mizutani
Department of Quantum Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan
Electrical properties of a carbon nanotube field-effect transistor (CNT-FET) with multiple CNT channels were studied by scanning gate microscopy (SGM), in which the scanning probe tip was used as a local gate. It was possible to distinguish the difference in electrical properties of individual CNT channels by SGM. Spot like SGM images were attributed to the barrier against carriers formed in the metallic CNT, resulting in a current modulation of the CNT-FET. It has also been shown that the barrier in the metallic CNT results in an ambipolar behavior of the CNT-FETs. ©2010

(As supplied by publisher.)

Permalink: http://dx.doi.org/10.1143/JJAP.49.02BD02
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