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Surface Potential Investigation of Carbon Nanotube Field-Effect Transistor by Point-by-Point Atomic Force Microscope Potentiometry

Source: Jpn. J. Appl. Phys. 49, 02BD03 (2010); doi:10.1143/JJAP.49.02BD03

Issue Date: 8 March 2010

PUBLICATION DATA
ISSN:
1553-9644 (online)
Publisher:
AIP is a member of CrossRef JSAP
Yuji Miyato
Department of Electronic Science and Engineering, Kyoto University, Katsura, Nishikyo, Kyoto 615-8510, Japan

Kei Kobayashi
Innovative Collaboration Center, Kyoto University, Katsura, Nishikyo, Kyoto 615-8510, Japan

Kazumi Matsushige
Department of Electronic Science and Engineering, Kyoto University, Katsura, Nishikyo, Kyoto 615-8510, Japan

Hirofumi Yamada
Department of Electronic Science and Engineering, Kyoto University, Katsura, Nishikyo, Kyoto 615-8510, Japan
We measured the local surface potential of a carbon nanotube field-effect transistor (CN-FET) by atomic force microscope potentiometry using the point-by-point contact method. When a bias voltage was applied to the nanotube, local variation in the surface potential reflecting the relative Fermi level was measured along the nanotube. Moreover, we observed that the potential barrier height at the source contact was changed upon application of positive gate voltages. This result suggests that the field-effect in the measured CN-FET was caused by modulation of the Schottky barrier at the source contact. ©2010

(As supplied by publisher.)

Permalink: http://dx.doi.org/10.1143/JJAP.49.02BD03
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