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Low-Voltage Operation of Ink-Jet-Printed Single-Walled Carbon Nanotube Thin Film Transistors

Source: Jpn. J. Appl. Phys. 49, 02BD09 (2010); doi:10.1143/JJAP.49.02BD09

Issue Date: 8 March 2010

PUBLICATION DATA
ISSN:
1553-9644 (online)
Publisher:
AIP is a member of CrossRef JSAP
Haruya Okimoto
Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan

Taishi Takenobu
Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan

Kazuhiro Yanagi
Nanotechnology Research Institute, Advanced Industrial Science and Technology, Tsukuba, Ibaraki 305-8562, Japan
Japan Science and Technology Agency (JST), CREST, Kawaguchi, Saitama 330-0012, Japan

Hizekazu Shimotani
Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan

Yasumitsu Miyata
Nanotechnology Research Institute, Advanced Industrial Science and Technology, Tsukuba, Ibaraki 305-8562, Japan

Hiromichi Kataura
Nanotechnology Research Institute, Advanced Industrial Science and Technology, Tsukuba, Ibaraki 305-8562, Japan
Japan Science and Technology Agency (JST), CREST, Kawaguchi, Saitama 330-0012, Japan

Yoshihiro Iwasa
Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan
We demonstrate a low-voltage and less hysteresis operation of single-walled carbon nanotube thin film transistors (SWCNT-TFTs) using an ionic liquid gate dielectric layer. We fabricated the density controlled SWCNT-TFTs using the inkjet printing technique, where both source/drain electrodes and the semiconducting transistor channel were made from SWCNT films. As the gate dielectric, we have adopted a printable ionic liquid for future all-printable processes and achieved marked improvements in operating voltages and hysteretic response. ©2010

(As supplied by publisher.)

Permalink: http://dx.doi.org/10.1143/JJAP.49.02BD09
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