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Measurements of the sheet resistance and conductivity of thin epitaxial graphene and SiC films

Source: Appl. Phys. Lett. 96, 082101 (2010); doi:10.1063/1.3327334

Published 23 February 2010

KEYWORDS and PACS
Keywords
PACS
  • 72.80.Rj
    Electrical conductivity of fullerenes and related materials
  • 73.25.+i
    Surface conductivity and carrier phenomena
  • 84.37.+q
    Electric variable measurements
  • 72.20.-i
    Electrical conductivity phenomena in semiconductors and insulators
  • YEAR: 2010
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PUBLICATION DATA
ISSN:
1553-9644 (online)
Publisher:
AIP is a member of CrossRef AIP
J. Krupka1 and W. Strupinski2
1Institute of Microelectronics and Optoelectronics, Warsaw University of Technology, Koszykowa 75, 00-662 Warsaw, Poland
2Institute of Electronic Materials Technology,Wolczynska 133, 01-919 Warsaw, Poland

Single postdielectric resonators operating on their quasi TE011 modes were used for the measurement of the surface resistance and conductivity of graphene films grown on semi-insulating SiC substrates. With this technique the surface resistance was measured with an uncertainty of ±5% and the conductivity was evaluated with an uncertainty equal to the uncertainty in determining the film thickness. The room temperature conductivity of the graphene films proved to be in the range 5×106 to 6.4×106  S/m. ©2010 American Institute of Physics
History: Received 11 December 2009; accepted 27 January 2010; published 23 February 2010
Permalink: http://link.aip.org/link/?APPLAB/96/082101/1

REFERENCES (8)

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