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Scalable growth of free-standing graphene wafers with copper(Cu) catalyst on SiO2/Si substrate: Thermal conductivity of the wafers

Source: Appl. Phys. Lett. 96, 083101 (2010); doi:10.1063/1.3324698

Published 22 February 2010

KEYWORDS and PACS
Keywords
PACS
  • 66.70.Lm
    Nonelectronic thermal conduction and heat-pulse propagation in other solids
  • 81.15.Gh
    Chemical vapor deposition
  • 78.67.Wj
    Optical properties of graphene
  • 78.30.Na
    Infrared and Raman spectra in fullerenes and related materials
  • 68.65.-k
    Low-dimensional, mesoscopic, and nanoscale systems: structure and nonelectronic properties
  • YEAR: 2010
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PUBLICATION DATA
ISSN:
1553-9644 (online)
Publisher:
AIP is a member of CrossRef AIP
Yun-Hi Lee (이윤희) and Jong-Hee Lee (이종희)
Department of Physics, National Research Laboratory for Nano Device Physics, Korea University, Seoul 136-713, Republic of Korea
The authors report scalable growth of free-standing graphene wafers with copper(Cu) catalyst on SiO2/Si substrate at low temperature and investigation of their thermal conductivity. The Cu is the most common and the cheapest catalyst among electronic materials. Our process for producing the graphene with the Cu is based on a low-pressure, fast-heating chemical vapor deposition method. Thermal conductivity measurements with nondestructive Raman spectroscopy showed that the free-standing-graphene is a good thermal conductor. The possibility of growing graphene wafer at low temperatures by using a Cu thin film should accelerate research and facilitate the development of graphene for practical applications ©2010 American Institute of Physics
History: Received 30 December 2009; accepted 27 January 2010; published 22 February 2010
Permalink: http://link.aip.org/link/?APPLAB/96/083101/1

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