Home | About Journal | Web Links | E-mail Alerts | RSS RSS Icon | Browse
Previous Article Next Article

High quality solution processed carbon nanotube transistors assembled by dielectrophoresis

Source: Appl. Phys. Lett. 96, 083110 (2010); doi:10.1063/1.3327521

Published 25 February 2010

EPAPS
KEYWORDS and PACS
Keywords
PACS
  • 85.30.Tv
    Semiconductor field effect devices
  • 85.35.Kt
    Nanotube devices
  • 82.45.-h
    Electrochemistry and electrophoresis
  • YEAR: 2010
RELATED DATABASES

To view database links for this article,
you need to log in.
To view database links for this article,
you need to log in.
PUBLICATION DATA
ISSN:
1553-9644 (online)
Publisher:
AIP is a member of CrossRef AIP
Paul Stokes and Saiful I. Khondaker
Department of Physics and Nanoscience Technology Center, University of Central Florida, 12424 Research Parkway, Orlando, Florida 32826, USA
We report on high quality individual solution processed single-walled carbon nanotube (SWNT) field effect transistors assembled from a commercial surfactant free solution via dielectrophoresis. The devices show field effect mobilities up to 1380  cm2/V s and on-state conductance up to 6  µS. The mobility values are an order of magnitude improvement over previous solution processed SWNT devices and close to the theoretical limit. These results demonstrate that high quality SWNT devices can be obtained from solution processing and will have significant impact in high yield fabrication of SWNT nanoelectronic devices. ©2010 American Institute of Physics
History: Received 8 December 2009; accepted 24 January 2010; published 25 February 2010
Permalink: http://link.aip.org/link/?APPLAB/96/083110/1

REFERENCES (21)

For access to fully linked references, you need to log in. For access to fully linked references, you need to Log in.
  1. P. Avouris, Z. H. Chen, and V. Perebeinos, Nat. Nanotechnol. 2, 605 (2007).
  2. A. Javey, Q. Wang, A. Ural, Y. Li, and H. Dai, Nano Lett. 2, 929 (2002).
  3. X. Zhou, J. -Y. Park, S. Huang, J. Liu, and P. L. McEuen, Phys. Rev. Lett. 95, 146805 (2005).
  4. D. Mann, A. Javey, J. Kong, Q. Wang, and H. Dai, Nano Lett. 3, 1541 (2003).
  5. A. Javey, J. Guo, Q. Wang, M. Lundstrom, and H. Dai, Nature (London) 424, 654 (2003).
  6. L. Huang, Z. Jia, and S. O'Brien, J. Mater. Chem. 17, 3863 (2007).
  7. M. J. O'Connell, S. M. Bachilo, C. B. Huffman, V. C. Moore, M. S. Strano, E. H. Haroz, K. L. Rialon, P. J. Boul, W. H. Noon, C. Kittrell, J. Ma, R. H. Hauge, R. B. Weisman, and R. E. Smalley, Science 297, 593 (2002).
  8. M. C. Hersam, Nat. Nanotechnol. 3, 387 (2008).
  9. M. C. LeMieux, M. Roberts, S. Barman, Y. W. Jin, J. M. Kim, and Z. Bao, Science 321, 101 (2008).
  10. M. S. Arnold, A. A. Green, J. F. Hulvat, S. I. Stupp, and M. C. Hersam, Nat. Nanotechnol. 1, 60 (2006).
  11. See http://www.brewerscience.com for more information about the commercially available SWNT solution.
  12. A. Vijayaraghavan, S. Blatt, D. Weissenberger, M. Oron-Carl, F. Hennrich, D. Gerthsen, H. Hahn, and R. Krupke, Nano Lett. 7, 1556 (2007).
  13. B. R. Burg, J. Schneider, M. Muoth, L. Durrer, T. Helbling, N. C. Schirmer, T. Schwamb, C. Hierold, and D. Poulikakos, Langmuir 25, 7778 (2009).
  14. W. J. Kim, C. Y. Lee, K. P. O'Brien, J. J. Plombon, J. M. Blackwell, and M. S. Strano, J. Am. Chem. Soc. 131, 3128 (2009).
  15. W. M. Wang, M. C. LeMieux, S. Selvarasah, M. R. Dokmeci, and Z. Bao, ACS Nano 3, 3543 (2009).
  16. L. F. Dong, V. Chirayos, J. Bush, J. Jiao, V. M. Dubin, R. V. Chebian, Y. Ono, J. F. Conley, Jr., and B. D. Ulrich, J. Phys. Chem. B 109, 13148 (2005).
  17. See supplementary material at http://dx.doi.org/10.1063/1.3327521 for mobility calculations of a few other devices and discussion regarding the assembly of metallic and semiconducting SWNTs. [EPAPS]
  18. W. Kim, A. Javey, R. Tu, J. Cao, Q. Wang, and H. Dai, Appl. Phys. Lett. 87, 173101 (2005).
  19. M. J. Biercuk, S. Ilani, C. M. Marcus, and P. L. McEuen, Top. Appl. Phys. 111, 455 (2008).
  20. S. K. Doorn, L. Zheng, M. J. O'Connell, Y. Zhu, S. Huang, and J. Liu, J. Phys. Chem. B 109, 3751 (2005).
  21. A. W. Bushmaker, V. V. Deshpande, S. Hsieh, M. W. Bockrath, and S. B. Cronin, Phys. Rev. Lett. 103, 067401 (2009).

CITING ARTICLES
For access to citing articles, you need to log in.
For access to citing articles, you need to Log in.
ADVERTISEMENT