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Patterned Growth of High-Quality Single-Walled Carbon Nanotubes from Dip-Coated Catalyst

Source: Jpn. J. Appl. Phys. 49, 02BA03 (2010); doi:10.1143/JJAP.49.02BA03

Issue Date: 8 March 2010

PUBLICATION DATA
ISSN:
1553-9644 (online)
Publisher:
AIP is a member of CrossRef JSAP
Rong Xiang
Department of Mechanical Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656, Japan

Erik Einarsson
Department of Mechanical Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656, Japan

Hiroto Okabe
Department of Mechanical Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656, Japan

Shohei Chiashi
Department of Mechanical Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656, Japan

Junichiro Shiomi
Department of Mechanical Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656, Japan

Shigeo Maruyama
Department of Mechanical Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656, Japan
Here, we show that the conventional concept of using SiO2-patterned Si substrates to selectively grow three-dimensional (3D) carbon nanotube structures can also be applied to dip coating. Patterned growth of high-quality vertically aligned single-walled carbon nanotubes (SWNTs) can be easily obtained by this protocol. Apart from the sintering of catalyst into Si at high temperatures, the difference in surface wettability between Si and SiO2 also plays an important role in this selective growth, which we utilize in a novel method of patterning SWNT growth on chemically modified surfaces. ©2010

(As supplied by publisher.)

Permalink: http://dx.doi.org/10.1143/JJAP.49.02BA03
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