Coherent transport through a double donor system in silicon
Source: Appl. Phys. Lett. 96, 072110 (2010); doi:10.1063/1.3318271
Published 19 February 2010
KEYWORDS and PACS
Aharonov-Bohm effect,
elemental semiconductors,
exchange interactions (electron),
field effect transistors,
nanostructured materials,
quantum computing,
silicon
- 85.30.Tv
Semiconductor field effect devices - YEAR: 2010
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PUBLICATION DATA
In this letter, we describe the observation of the interference of conduction paths induced by two donors in a nanoscale silicon transistor, resulting in a Fano resonance. This demonstrates the coherent exchange of electrons between two donors. In addition, the phase difference between the two conduction paths can be tuned by means of a magnetic field, in full analogy to the Aharonov–Bohm effect. One of the crucial ingredients for donor based quantum computation is phase coherent manipulation of electrons. This has not been achieved as yet, and this work presents a stepping stone.
©2010 American Institute of Physics
| History: | Received 19 November 2009; accepted 23 January 2010; published 19 February 2010 |
| Permalink: |
http://link.aip.org/link/?APPLAB/96/072110/1 |
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