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Charge sensing in intrinsic silicon quantum dots

Source: Appl. Phys. Lett. 96, 082104 (2010); doi:10.1063/1.3318463

Published 23 February 2010

KEYWORDS and PACS
Keywords
PACS
  • 85.35.Gv
    Single electron devices
  • 07.07.Df
    Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing
  • 07.50.Ls
    Electrometers
  • YEAR: 2010
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PUBLICATION DATA
ISSN:
1553-9644 (online)
Publisher:
AIP is a member of CrossRef AIP
G. J. Podd,1 S. J. Angus,2 D. A. Williams,1 and A. J. Ferguson3
1Hitachi Cambridge Laboratory, Cavendish Laboratory, JJ Thomson Avenue, Cambridge CB3 0HE, United Kingdom
2Centre for Quantum Computer Technology, School of Physics The University of Melbourne, Victoria 3010, Australia
3Microelectronics Research Centre, Cavendish Laboratory, JJ Thomson Avenue, Cambridge CB3 0HE, United Kingdom
We report charge sensing measurements on a silicon quantum dot with a nearby silicon single electron transistor (SET) acting as an electrometer. The devices are electrostatically formed in bulk silicon using surface gates. We show that as an additional electron is added onto the quantum dot, a charge is induced on the SET of approximately 0.2e. These measurements are performed in the many electron regime, where we can count in excess of 20 charge additions onto the quantum dot. ©2010 American Institute of Physics
History: Received 28 October 2009; accepted 21 January 2010; published 23 February 2010
Permalink: http://link.aip.org/link/?APPLAB/96/082104/1

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