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In situ photoemission spectroscopy study on formation of HfO2 dielectrics on epitaxial graphene on SiC substrate

Source: Appl. Phys. Lett. 96, 072111 (2010); doi:10.1063/1.3327834

Published 19 February 2010

KEYWORDS and PACS
Keywords
PACS
  • 81.15.Cd
    Deposition by sputtering
  • 68.55.A-
    Thin film nucleation and growth
  • 68.60.Dv
    Thermal stability of thin films; thermal effects
  • 79.60.Jv
    Photoelectron spectra of interfaces; heterostructures; nanostructures
  • 82.80.Pv
    Electron spectroscopy (chemical analysis)
  • 77.55.D-
    High-permittivity gate dielectric films
  • YEAR: 2010
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PUBLICATION DATA
ISSN:
1553-9644 (online)
Publisher:
AIP is a member of CrossRef AIP
Q. Chen,1 H. Huang,1 W. Chen,1 A. T. S. Wee,1 Y. P. Feng,1 J. W. Chai,2 Z. Zhang,2 J. S. Pan,2 and S. J. Wang2
1Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117542
2Institute of Materials Research and Engineering, A*STAR (Agency for Science, Technology, and Research), 3 Research Link, Singapore 117602
High quality HfO2 dielectrics have been grown on epitaxial graphene on 4H-SiC substrates and have been studied by using in situ x-ray photoemission spectroscopy. The in situ thermal treatment shows that the HfO2/graphene/4H-SiC heterojunctions have good thermal stability up to 650 °C. A shift of core-level spectra from graphene layer implies that charge transfer takes place at the interface. The high thermal stability and sufficient barrier heights between HfO2 and graphene indicate that high-k dielectric grown on graphene is very promising for the development of graphene-based electronic devices. ©2010 American Institute of Physics
History: Received 8 January 2010; accepted 29 January 2010; published 19 February 2010
Permalink: http://link.aip.org/link/?APPLAB/96/072111/1

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