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Fundamental Oscillation of up to 915 GHz in Small-Area InGaAs/AlAs Resonant Tunneling Diodes with Planar Slot Antennas

Source: Jpn. J. Appl. Phys. 49, 020211 (2010); doi:10.1143/JJAP.49.020211

Issue Date: 8 March 2010

PUBLICATION DATA
ISSN:
1553-9644 (online)
Publisher:
AIP is a member of CrossRef JSAP
Masato Shiraishi
Interdisciplinary Graduate School of Science and Technology, Tokyo Institute of Technology, 2-12-1-S9-3 Ookayama, Meguro, Tokyo 152-8552, Japan

Safumi Suzuki
Interdisciplinary Graduate School of Science and Technology, Tokyo Institute of Technology, 2-12-1-S9-3 Ookayama, Meguro, Tokyo 152-8552, Japan

Atsushi Teranishi
Interdisciplinary Graduate School of Science and Technology, Tokyo Institute of Technology, 2-12-1-S9-3 Ookayama, Meguro, Tokyo 152-8552, Japan

Masahiro Asada
Interdisciplinary Graduate School of Science and Technology, Tokyo Institute of Technology, 2-12-1-S9-3 Ookayama, Meguro, Tokyo 152-8552, Japan

Hiroki Sugiyama
NTT Photonics Laboratories, 3-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0198, Japan

Haruki Yokoyama
NTT Photonics Laboratories, 3-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0198, Japan
A fundamental oscillation of up to 915 GHz was observed at room temperature in small-area InGaAs/AlAs resonant tunneling diodes (RTDs) with planar slot antennas. The dependence of the oscillation frequency on the RTD mesa area was also shown. Although the output power was small (a few tens of nanowatts) in this study owing to the relatively low available current density (difference in current density between the peak and the valley: ${\sim}3$ mA/µm2) and the small mesa area (${\sim}0.63$ µm2), it was expected that the output power can be increased by a high available current density. ©2010

(As supplied by publisher.)

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