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GaAs Nanowire and Crystallite Growth on Amorphous Substrate from Metalorganic Precursors

Source: Jpn. J. Appl. Phys. 49, 020213 (2010); doi:10.1143/JJAP.49.020213

Issue Date: 8 March 2010

PUBLICATION DATA
ISSN:
1553-9644 (online)
Publisher:
AIP is a member of CrossRef JSAP
Gintare Statkute
Department of Micro and Nanosciences, Helsinki University of Technology, P.O. Box 3500, 02015 TKK, Finland

Albert G. Nasibulin
NanoMaterials Group, Department of Engineering Physics, Helsinki University of Technology, Puumiehenkuja 2, 02150 Espoo, Finland

Markku Sopanen
Department of Micro and Nanosciences, Helsinki University of Technology, P.O. Box 3500, 02015 TKK, Finland

Teppo Hakkarainen
Department of Micro and Nanosciences, Helsinki University of Technology, P.O. Box 3500, 02015 TKK, Finland

Esko Kauppinen
NanoMaterials Group, Department of Engineering Physics, Helsinki University of Technology, Puumiehenkuja 2, 02150 Espoo, Finland
VTT, Biotechnology, Biologinkuja 7, 02044 Espoo, Finland

Harri Lipsanen
Department of Micro and Nanosciences, Helsinki University of Technology, P.O. Box 3500, 02015 TKK, Finland
GaAs nanowires and crystallites were grown by metalorganic chemical vapor deposition from metalorganic precursors on amorphous silica obtained by thermal oxidation of 111 plane Si. The samples were characterized by scanning electron microscopy, transmission electron microscopy and energy dispersive X-ray spectroscopy. It was found that crystalline GaAs structures can be grown on silica. ©2010

(As supplied by publisher.)

Permalink: http://dx.doi.org/10.1143/JJAP.49.020213
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