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Present status of theoretical modeling the magnetoelectric effect in magnetostrictive-piezoelectric nanostructures. Part II: Magnetic and magnetoacoustic resonance ranges

Source: J. Appl. Phys. 107, 053905 (2010); doi:10.1063/1.3313920

Published 4 March 2010

EDITORIALLY RELATED
  1. Present status of theoretical modeling the magnetoelectric effect in magnetostrictive-piezoelectric nanostructures. Part I: Low frequency and electromechanical resonance ranges
    M. I. Bichurin et al.
    J. Appl. Phys. 107, 053904 (2010)
KEYWORDS and PACS
Keywords
PACS
  • 75.85.+t
    Magnetoelectric effects, multiferroics
  • 81.07.Bc
    Nanocrystalline materials: fabrication and characterization
  • 77.65.-j
    Piezoelectricity and electromechanical effects
  • 75.80.+q
    Magnetomechanical and magnetoelectric effects, magnetostriction
  • 75.50.Gg
    Ferrimagnetics
  • 76.50.+g
    Ferromagnetic, antiferromagnetic, and ferrimagnetic resonances; spin-wave resonance
  • YEAR: 2010
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PUBLICATION DATA
ISSN:
1553-9644 (online)
Publisher:
AIP is a member of CrossRef AIP
M. I. Bichurin,1 V. M. Petrov,1 S. V. Averkin,1 and E. Liverts2
1Institute of Electronic and Information Systems, Novgorod State University, B. S. Peterburgskaya St. 41, 173003 Veliky Novgorod, Russia
2Mechanical Engineering, Ben-Gurion University of the Negev, 84105 Beersheva, Israel
We presented here the theoretical analysis of high frequency magnetoelectric (ME) effects for a ferrite-piezoelectric bilayer and a detailed treatment for electric field induced resonance field shift for ferromagnetic resonance (FMR) in layered structures. ME effects in a single-crystal ferrite-piezoelectric bilayer in the magnetoelastic resonance region are considered. The theory predicts a giant ME effect at magnetoacoustic resonance. The enhancement in ME effect predicted by our theory arises from interaction between elastic modes and the uniform precession mode, resulting in magnetoelastic modes. The peak ME voltage coefficient appears at the coincidence of acoustic resonance and FMR frequencies. In our calculations, we suppose that the layer thickness is sufficiently large to neglect the influence of strain relaxation on average stresses in the structures that determine the ME voltage coefficient. The work presented here will certainly be of interest for the design and analysis of electrically controlled high-frequency devices. Microwave devices of magnetic type with electrical control have unique advantages over traditional ferrite and semiconductor analogs. ©2010 American Institute of Physics
History: Received 30 April 2009; accepted 18 January 2010; published 4 March 2010
Permalink: http://link.aip.org/link/?JAPIAU/107/053905/1

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