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Multiferroic GaN nanofilms grown within Na-4 mica channels

Source: Appl. Phys. Lett. 96, 093109 (2010); doi:10.1063/1.3340897

Published 3 March 2010

EPAPS
KEYWORDS and PACS
Keywords
PACS
  • 81.16.-c
    Methods of nanofabrication and processing
  • 75.80.+q
    Magnetomechanical and magnetoelectric effects, magnetostriction
  • 77.22.Ch
    Permittivity (dielectric function)
  • 75.85.+t
    Magnetoelectric effects, multiferroics
  • 75.50.Pp
    Magnetic semiconductors
  • 77.80.-e
    Ferroelectricity and antiferroelectricity
  • YEAR: 2010
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PUBLICATION DATA
ISSN:
1553-9644 (online)
Publisher:
AIP is a member of CrossRef AIP
Santanu Bhattacharya, A. Datta, and D. Chakravorty
DST Unit on Nanoscience and MLS Unit, Indian Association for the Cultivation of Science, Jadavpur, Kolkata 700 032, India
Gallium nitride nanofilms grown within nanochannels of Na-4 mica structure, exhibit ferromagnetism even at room temperature due to the presence of gallium vacancies at the surfaces of the nanofilms. These nanofilms also show a ferroelectric behavior at room temperature ascribed to a small distortion in the crystal structure of GaN due to its growth within the Na-4 mica nanochannels. A colossal increase in 338% in dielectric constant was observed for an applied magnetic field of 26 kOe. The magnetoelectric effect is ascribed to magnetostriction of magnetic GaN phase. ©2010 American Institute of Physics
History: Received 26 November 2009; accepted 28 January 2010; published 3 March 2010
Permalink: http://link.aip.org/link/?APPLAB/96/093109/1

REFERENCES (26)

For access to fully linked references, you need to log in. For access to fully linked references, you need to Log in.
  1. M. Fiebig, T. Lottermoser, M. K. Kneip, and M. Bayer, J. Appl. Phys. 99, 08E302 (2006).
  2. N. A. Spaldin and M. Fiebig, Science 309, 391 (2005).
  3. G. A. Somolenski[i-breve] and I. Chipis, Sov. Phys. Usp. 25, 475 (1982).
  4. W. Eerenstein, N. D. Mathur, and J. F. Scott, Nature (London) 442, 759 (2006).
  5. J. Wang, J. B. Neaton, H. Zheng, V. Nagarajan, S. B. Ogale, B. Liu, D. Viehland, V. Vaithyanathan, D. G. Schlom, U. V. Waghmare, N. A. Spaldin, K. M. Rabe, M. Wuttig, and R. Ramesh, Science 299, 1719 (2003).
  6. A. Filippetti and N. A. Hill, J. Magn. Magn. Mater. 236, 176 (2001).
  7. M. Fiebig, T. Lottermoser, D. Fröhlich, A. V. Goltsev, and R. V. Pisarev, Nature (London) 419, 818 (2002).
  8. N. A. Hill and K. M. Rabe, Phys. Rev. B 59, 8759 (1999).
  9. R. Seshadri and N. A. Hill, Chem. Mater. 13, 2892 (2001).
  10. J. Strempfer, B. Bohnenbuck, M. Mostovoy, N. Aliouane, D. N. Argyriou, F. Schrettle, J. Hemberger, A. Krimmel, and M. V. Zimmermann, Phys. Rev. B 75, 212402 (2007).
  11. N. Aliouane, D. N. Argyriou, J. Strempfer, I. Zegkinoglou, S. Landsgesell, and M. V. Zimmermann, Phys. Rev. B 73, 020102 (2006).
  12. D. N. Argyriou, N. Aliouane, J. Strempfer, I. Zegkinoglou, B. Bohnenbuck, K. Habicht, and M. V. Zimmermann, Phys. Rev. B 75, 020101 (2007).
  13. Y. Kuroiwa, S. Aoyagi, A. Sawada, J. Harada, E. Nishibori, M. Takata, and M. Sakata, Phys. Rev. Lett. 87, 217601 (2001).
  14. X. L. Zhong, J. B. Wang, M. Liao, G. J. Huang, S. H. Xie, Y. C. Zhou, Y. Qiao, and J. P. He, Appl. Phys. Lett. 90, 152903 (2007).
  15. M. Liu, X. Li, H. Imrane, Y. Chen, T. Goodrich, Z. Cai, K. S. Ziemer, J. Y. Huang, and N. X. Sun, Appl. Phys. Lett. 90, 152501 (2007).
  16. A. Dan, P. K. Mukherjee, and D. Chakravorty, J. Mater. Chem. 15, 1477 (2005).
  17. P. K. Mukherjee, K. Chatterjee, and D. Chakravorty, Phys. Rev. B 73, 035414 (2006).
  18. See supplementary material at http://dx.doi.org/10.1063/1.3340897 for structural information of Na-4 mica (S1), for understanding the formation of GaN nanofilms (S2), and for verification of connected network of GaN by studying the value of resistivity and its variation with temperature (S3). [EPAPS]
  19. S. Bhattacharya, A. Datta, S. Dhara, and D. Chakravorty, J. Phys. D: Appl. Phys. 42, 235504 (2009).
  20. C. Madhu, A. Sundaresan, and C. N. R. Rao, Phys. Rev. B 77, 201306 (2008).
  21. P. Larson and S. Satpathy, Phys. Rev. B 76, 245205 (2007).
  22. P. Mahadevan and S. Mahalakshmi, Phys. Rev. B 73, 153201 (2006).
  23. M. M. Parish and P. B. Littlewood, Phys. Rev. Lett. 101, 166602 (2008).
  24. W. F. Brown, Jr., R. M. Hornrich, and S. Shtrikman, Phys. Rev. 168, 574 (1968).
  25. W. Qian, M. Skowronski, and G. R. Rohrer, in III-Nitride, SiC, and Diamond Materials for Electronic Device, MRS Symposia Proceedings Vol. 423, edited by D. K. Gaskill, C. D. Brandt, and R. J. Nemarich (Materials Research Society, Pittsburgh, 1996), p. 475.
  26. C. Kittel, Introduction to Solid State Physics (Wiley, New York, 1961), p. 431.

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