Home | About Journal | Web Links | E-mail Alerts | RSS RSS Icon | Browse
Previous Article Next Article

How Boron Nitride Forms a Regular Nanomesh on Rh(111)

Source: Phys. Rev. Lett. 104, 096102 (2010); doi:10.1103/PhysRevLett.104.096102

Published 3 March 2010

PACS
  • 68.55.Ln
    Thin film defects and impurities
  • 68.37.Ef
    Scanning tunneling microscopy of surfaces, interfaces and thin films
  • 81.15.Gh
    Chemical vapor deposition
  • YEAR: 2010
PUBLICATION DATA
ISSN:
1553-9644 (online)
Publisher:
AIP is a member of CrossRef APS
Guocai Dong, Elodie B. Fourré, Femke C. Tabak, and Joost W. M. Frenken
Kamerlingh Onnes Laboratory, Leiden University, PO Box 9504, 2300 RA Leiden, The Netherlands
Boron nitride forms nearly perfectly regular films with a thickness of precisely one atom on various metal surfaces. Here, we follow the formation of boron nitride layers on Rh(111) with scanning tunneling microscopy (STM) under realistic growth conditions, up to 1200 K. Our STM movies demonstrate in detail how the structure grows and how defects are introduced. Based on these observations we arrive at the optimal recipe for a high-quality overlayer. ©2010 The American Physical Society
History: Received 18 November 2009; published 3 March 2010
Permalink: http://link.aps.org/abstract/PRL/v104/e096102
ADVERTISEMENT