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Pore-size dependence of the thermal conductivity of porous silicon: A phonon hydrodynamic approach

Source: Appl. Phys. Lett. 97, 033103 (2010); doi:10.1063/1.3462936

Published 20 July 2010

KEYWORDS and PACS
Keywords
PACS
  • 61.43.Gt
    Structure of powders and porous materials
  • 63.20.-e
    Phonons in crystal lattices
  • 72.80.Cw
    Electrical conductivity of elemental semiconductors
  • YEAR: 2010
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PUBLICATION DATA
ISSN:
1553-9644 (online)
Publisher:
AIP is a member of CrossRef AIP
F. X. Alvarez,1 D. Jou,1,2 and A. Sellitto3
1Departament de Física, Universitat Autònoma de Barcelona, 08193 Bellaterra, Catalonia, Spain
2Institut d'Estudis Catalans, Carme 47, Barcelona 08001, Catalonia, Spain
3Department of Mathematics and Computer Science, University of Basilicata, Campus Macchia Romana, 85100 Potenza, Italy
Phonon hydrodynamics is used to analyze the influence of porosity and of pore size on reduction in thermal conductivity in porous silicon, with respect to crystalline silicon. The expressions predict that the thermal conductivity is lower for higher porosity and for smaller pore radius, as a consequence of phonon ballistic effects. The theoretical results describe experimental data better than the assumption that they only depend on porosity. ©2010 American Institute of Physics
History: Received 12 April 2010; accepted 21 June 2010; published 20 July 2010
Permalink: http://link.aip.org/link/?APPLAB/97/033103/1

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