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Suppression of Octahedral Tilts and Associated Changes in Electronic Properties at Epitaxial Oxide Heterostructure Interfaces

Source: Phys. Rev. Lett. 105, 087204 (2010); doi:10.1103/PhysRevLett.105.087204

Published 19 August 2010

PACS
  • 75.85.+t
    Magnetoelectric effects, multiferroics
  • 68.37.Ma
    Scanning transmission electron microscopy (STEM) of surfaces, interfaces and thin films
  • 68.65.-k
    Low-dimensional, mesoscopic, and nanoscale systems: structure and nonelectronic properties
  • 79.20.Uv
    Electron energy loss spectroscopy
  • YEAR: 2010
PUBLICATION DATA
ISSN:
1553-9644 (online)
Publisher:
AIP is a member of CrossRef APS
A. Y. Borisevich,1 H. J. Chang,1 M. Huijben,2,3 M. P. Oxley,1 S. Okamoto,1 M. K. Niranjan,4 J. D. Burton,4 E. Y. Tsymbal,4 Y. H. Chu,5 P. Yu,3 R. Ramesh,3 S. V. Kalinin,1 and S. J. Pennycook1
1Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, USA
2Faculty of Science and Technology, MESA+ Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500 AE, Enschede, The Netherlands
3Department of Materials Science and Engineering and Department of Physics, University of California, Berkeley, California 94720, USA
4Department of Physics and Astronomy, Nebraska Center for Materials and Nanoscience, University of Nebraska, Lincoln, Nebraska 68588, USA
5Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu, Taiwan 30013, Republic of China

Epitaxial oxide interfaces with broken translational symmetry have emerged as a central paradigm behind the novel behaviors of oxide superlattices. Here, we use scanning transmission electron microscopy to demonstrate a direct, quantitative unit-cell-by-unit-cell mapping of lattice parameters and oxygen octahedral rotations across the BiFeO3-La0.7Sr0.3MnO3 interface to elucidate how the change of crystal symmetry is accommodated. Combined with low-loss electron energy loss spectroscopy imaging, we demonstrate a mesoscopic antiferrodistortive phase transition near the interface in BiFeO3 and elucidate associated changes in electronic properties in a thin layer directly adjacent to the interface.
History: Received 10 February 2010; published 19 August 2010
Permalink: http://link.aps.org/abstract/PRL/v105/e087204
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