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Electron microscopy of GaAs/MnAs core/shell nanowires

Source: Appl. Phys. Lett. 97, 072505 (2010); doi:10.1063/1.3481066

Published 18 August 2010

KEYWORDS and PACS
Keywords
PACS
  • 68.65.La
    Quantum wires patterned in quantum wells (structure and nonelectronic properties)
  • 81.07.Gf
    Nanowires
  • 81.07.Vb
    Quantum wires: fabrication and characterization
  • 68.55.A-
    Thin film nucleation and growth
  • 61.66.Fn
    Crystal structure of specific inorganic compounds
  • 81.05.Ea
    III-V semiconductors: fabrication, treatment, testing and analysis
  • YEAR: 2010
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PUBLICATION DATA
ISSN:
1553-9644 (online)
Publisher:
AIP is a member of CrossRef AIP
N. S. Dellas,1 J. Liang,2 B. J. Cooley,2 N. Samarth,2 and S. E. Mohney1
1Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, USA
2Department of Physics, The Pennsylvania State University, University Park, Pennsylvania 16802, USA
GaAs/MnAs core/shell nanowire heterostructures were synthesized by catalyst-free molecular beam epitaxy. Transmission electron microscopy (TEM) reveals that the GaAs core predominantly grows with the zinc-blende crystal structure with a [111] growth direction. In a small population of wires, the crystal structure transitions from zinc blende to wurtzite with a [001] growth direction. Cross-sectional TEM shows that the MnAs grows epitaxially on the GaAs core in the NiAs prototype structure with an epitaxial relation of [20[overline 2]1] MnAs||[111]GaAs and (01[overline 1]0) MnAs||GaAs ([overline 1]10). When the GaAs core is in the wurtzite structure, the epitaxial relation between the GaAs and MnAs changes to [0001] MnAs||[0001]GaAs and ([overline 1]2[overline 1]0) MnAs||([overline 1]2[overline 1]0)GaAs. ©2010 American Institute of Physics
History: Received 30 March 2010; accepted 23 July 2010; published 18 August 2010
Permalink: http://link.aip.org/link/?APPLAB/97/072505/1

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