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Large thermoelectric figure of merit for three-dimensional topological Anderson insulators via line dislocation engineering

Source: Appl. Phys. Lett. 97, 073108 (2010); doi:10.1063/1.3481382

Published 18 August 2010

KEYWORDS and PACS
Keywords
PACS
  • 72.20.Pa
    Thermoelectric and thermomagnetic effects (semiconductors/insulators)
  • 61.72.Hh
    Indirect evidence of dislocations and other defects
  • YEAR: 2010
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PUBLICATION DATA
ISSN:
1553-9644 (online)
Publisher:
AIP is a member of CrossRef AIP
O. A. Tretiakov,1 Ar. Abanov,1 Shuichi Murakami,2,3 and Jairo Sinova1
1Department of Physics, Texas A&M University, College Station, Texas 77843, USA
2Department of Physics, Tokyo Institute of Technology, Ookayama, Meguro-ku, Tokyo 152-8551, Japan
3PRESTO, Japan Science and Technology Agency (JST), Kawaguchi, Saitama 332-0012, Japan
We study the thermoelectric properties of three-dimensional topological Anderson insulators with line dislocations. We show that at high densities of dislocations the thermoelectric figure of merit ZT can be dominated by one-dimensional topologically protected conducting states channeled through the lattice screw dislocations in the topological insulator materials with a nonzero time-reversal-invariant momentum such as Bi0.9Sb0.1. When the chemical potential does not exceed much the mobility edge the ZT at room temperatures can reach large values, much higher than unity for reasonable parameters, hence making this system a strong candidate for applications in heat management of nanodevices. ©2010 American Institute of Physics
History: Received 23 July 2010; accepted 30 July 2010; published 18 August 2010
Permalink: http://link.aip.org/link/?APPLAB/97/073108/1

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