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Low-frequency noise in strained SiGe core-shell nanowire p-channel field effect transistors

Source: Appl. Phys. Lett. 97, 073505 (2010); doi:10.1063/1.3480424

Published 19 August 2010

KEYWORDS and PACS
Keywords
PACS
  • 85.30.Tv
    Semiconductor field effect devices
  • YEAR: 2010
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PUBLICATION DATA
ISSN:
1553-9644 (online)
Publisher:
AIP is a member of CrossRef AIP
Doyoung Jang,1,2 Jae Woo Lee,1,2 Kiichi Tachi,1,3,4 Laurent Montes,1 Thomas Ernst,3 Gyu Tae Kim,2 and Gerard Ghibaudo1
1IMEP-LAHC, Grenoble INP-MINATEC, 3 Parvis Louis Neel, 38016 Grenoble, France
2School of Electrical Engineering, Korea University, Seoul 136-701, Republic of Korea
3CEA-LETI, MINATEC, 17 avenue des Martyrs, 38054 Grenoble Cedex 9, France
4Frontier Research Center, Tokyo Institute of Technology, Yokohama 226-8502, Japan
Low-frequency noise has been studied in compressively strained Si0.8Ge0.2 core-shell nanowire (NW) p-channel transistors compared with unstrained NWs. The noise has been well interpreted using the carrier number with correlated mobility fluctuation model. The volume trap density, Nt, lies in the range of 2.9×1018–4.3×1019  cm−3 eV−1, which is similar to standard high-k planar devices. The impact of Coulomb and surface roughness scatterings is more significant in unstrained SiGe NWs. This result can be explained by the better carrier confinement at the central region of SiGe NWs due to the additional band offset in the compressively strained NWs. ©2010 American Institute of Physics
History: Received 12 May 2010; accepted 27 July 2010; published 19 August 2010
Permalink: http://link.aip.org/link/?APPLAB/97/073505/1

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